DATA SHEET www.onsemi.com PNP Epitaxial Silicon Transistor KSA1015 1. Emitter 2. Collector 1 Features 2 3. Base 3 LowFrequency Amplifier Bent Lead CollectorBase Voltage: V = 50 V Tape & Reel CBO Ammo Packing Complement to KSC1815 TO92 3 4.83x4.76 LEADFORMED These Devices are PbFree, Halogen Free/BFR Free and are RoHS CASE 135AR Compliant ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MARKING DIAGRAM Symbol Parameter Value Unit V CollectorBase Voltage 50 V A1015 CBO (GR, Y) V CollectorEmitter Voltage 50 V CEO AYWW V EmitterBase Voltage 5 V EBO I Collector Current 150 mA C I Base Current 50 mA B A = Assembly Site A1015(GR, Y) = Device Code T Junction Temperature 150 C J Y = Year of Production, T Storage Temperature Range 55 to 150 C STG WW = Work Week Number Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL CHARACTERISTICS (Note 1) Packing (T = 25C unless otherwise noted) A Device Marking Package Method Symbol Parameter Max Unit KSA1015GRTA A1015GR TO92 3L Ammo (PbFree) P Total Device Dissipation 400 mW D KSA1015YTA A1015Y TO92 3L Ammo Derate Above 25C 3.2 mW/C (PbFree) Thermal Resistance, Junction to Ambient 312 C/W R JA 1. PCB size: FR4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: December, 2021 Rev. 2 KSA1015/DKSA1015 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Conditions Min Typ Max Unit BV CollectorBase Breakdown Voltage I = 100 A, I = 0 50 V CBO C E BV CollectorEmitter Breakdown Voltage I = 10 mA, I = 0 50 V CEO C B BV EmitterBase Breakdown Voltage I = 10 A, I = 0 5 V EBO E C I Collector CutOff Current V = 50 V, I = 0 0.1 A CBO CB E I Emitter CutOff Current V = 5 V, I = 0 0.1 A EBO EB C h 1 DC Current Gain V = 6 V, I = 2 mA 70 400 FE CE C h 2 DC Current Gain V = 6 V, I = 150 mA 25 FE CE C V (sat) CollectorEmitter Saturation Voltage I = 100 mA, I = 10 mA 0.1 0.3 V CE C B V (sat) BaseEmitter Saturation Voltage I = 100 mA, I = 10 mA 1.1 V BE C B f Current Gain Bandwidth Product V = 10 V, I = 1 mA 80 MHz T CE C C Output Capacitance V = 10 V, I = 0, f = 1 MHz 4 7 pF ob CB E NF Noise Figure V = 6 V, I = 0.1 mA, f = 100 Hz, 0.5 6 dB CE C R = 10 k G Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. h CLASSIFICATION FE Classification O Y GR h 1 70~140 120~240 200~400 FE www.onsemi.com 2