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Emitter 2.Collector 3.Base PNP Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted C Symbol Parameter Ratings Units V Collector-Base Voltage - 400 V CBO V Collector-Emitter Voltage - 400 V CEO V Emitter-Base Voltage - 7 V EBO I Base Current - 0.25 A B I Collector Current (DC) - 0.5 A C I Collector Current (Pulse) - 1 A CP P Collector Dissipation (T =25C) 1 W C a P Collector Dissipation (T =25C) 10 W C C T Junction Temperature 150 C J T Storage Temperature - 55 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) Collector-Emitter Sustaining Voltage I = - 100mA, I = - 10mA - 400 V CEO C B L = - 20mH V (sus) Collector-Emitter Sustaining Voltage I = - 200mA, I = - I = - 20mA - 400 V CEX C B1 B2 V (off)= 5V, L = 10mH BE I Collector Cut-off Current V = - 400V, I = 0 - 100 A CBO CB E I Emitter Cut-off Current V = - 5V, I = 0 - 10 A EBO EB C I Collector Cut-off Current V = - 400V, V (off) = 1.5V - 100 A CEX1 CE BE - 1 mA I Collector Cut-off Current V = - 400V, V (off) = 1.5V CEX2 CE BE T = 125C C h DC Current Gain V = - 5V, I = - 100mA 30 200 FE CE C V (sat) Collector-Emitter Saturation Voltage I = - 100mA, I = - 10mA - 1 V CE C B V (sat) Base-Emitter Saturation Voltage I = - 100mA, I = - 10mA - 1.2 V BE C B t Turn On Time V = - 150V, I = - 100mA 1 s ON CC C I = - 10mA , I = 20mA t Storage Time B1 B2 4 s STG R = 1.5K L t Fall Time 1 s F h Classification FE Classification N R O Y h 30 ~ 60 40 ~ 80 60 ~ 120 100 ~ 200 FE 2000 Fairchild Semiconductor International Rev. A, February 2000