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Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -60 V CEO V Emitter-Base Voltage -8 V EBO I Collector Current -700 mA C P Collector Power Dissipation 800 mW C T Junction Temperature 150 C J T Storage Temperature -55 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100 A, I =0 -80 V CBO C E BV Collector-Emitter Breakdown Voltage I = -10mA, I =0 -60 V CEO C B BV Emitter-Base Breakdown Voltage I = -100 A, I =0 -8 V EBO E C I Collector Cut-off Current V = -60V, I =0 -0.1 A CBO CB E I Emitter Cut-off Current V = -5V, I =0 -0.1 A EBO EB C h * DC Current Gain V = -2V, I = -50mA 40 240 FE CE C V (sat) * Collector-Emitter Saturation Voltage I = -500mA, I = -50mA -0.3 -0.7 V CE C B V (sat) * Base-Emitter Saturation Voltage I = -500mA, I = -50mA -0.9 1.1 V BE C B f Current Gain Bandwidth Product V = -10V, I = -50mA 50 MHz T CE C C Output Capacitance V = -10V, I =0, f=1MHz 13 pF ob CB E * Pulse Test: PW350 s, Duty cycle2% h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE 2001 Fairchild Semiconductor Corporation Rev. A1, August 2001