PNP Epitaxial Silicon Transistor KSA916 Features Audio Power Amplifier www.onsemi.com Driver Stage Amplifier Complement to KSC2316 ABSOLUTE MAXIMUM RATINGS (Values are at T = 25C unless otherwise noted.) A Symbol Parameter Value Unit V CollectorBase Voltage 120 V CBO TO92 3 LF CASE 135AM V CollectorEmitter Voltage 120 V CEO V EmitterBase Voltage 5 V EBO MARKING DIAGRAM I Collector Current 800 mA C T Junction Temperature 150 C J T Storage Temperature 55 to +150 C STG AA9 Stresses exceeding those listed in the Maximum Ratings table may damage the 16Y device. If any of these limits are exceeded, device functionality should not be YWW assumed, damage may occur and reliability may be affected. 1: Emitter 2: Collector THERMAL CHARACTERISTICS 3: Base (Values are at T = 25C unless otherwise noted.) (Note 1) A Symbol Parameter Value Unit 12 3 P Power Dissipation, by R 900 mW D JA Power Dissipation, by R 3 W JC A = Assembly Code A916Y = Device Code 7.2 mW/C Derate Above 25 C, by R JA YWW = Date Code Derate Above 25 C, by R 24 mW/C JC R Thermal Resistance, 130 C/W JA JunctiontoAmbient ORDERING INFORMATION R Thermal Resistance, 41 C/W JC Device Package Shipping JunctiontoCase KSA916YTA TO92 3 LF 2000 / 1. PCB size: FR4, 76 mm 114 mm 1.57 mm (3.0 inch 4.5 inch 0.062 inch) (PbFree) FanFold with minimum land pattern size. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: March, 2021 Rev. 2 KSA916/DKSA916 ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted.) A Symbol Parameter Conditions Min. Typ. Max. Unit BV CollectorBase Breakdown Voltage I = 1 mA, I = 0 120 V CBO C E BV CollectorEmitter Breakdown Voltage I = 10 mA, I = 0 120 V CEO C B BV EmitterBase Breakdown Voltage I = 1 mA, I = 0 5 V EBO E C I Collector CutOff Current V = 120 V, I = 0 0.1 A CBO CB E h DC Current Gain V = 5 V, I = 10 mA 60 FE1 CE C h DC Current Gain V = 5 V, I = 100 mA 80 240 FE2 CE C V (sat) CollectorEmitter Saturation Voltage I = 500 mA, I = 50 mA 1 V CE C B f Current Gain Bandwidth Product V = 5 V, I = 100 mA 120 MHz T CE C C Output Capacitance V = 10 V, I = 0, f = 1 MHz 40 pF ob CB E Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. h CLASSIFICATION FE Classification O Y h 80 ~ 160 120 ~ 240 FE2 www.onsemi.com 2