X-On Electronics has gained recognition as a prominent supplier of KSA940TU Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. KSA940TU Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

KSA940TU ON Semiconductor

KSA940TU electronic component of ON Semiconductor
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Part No.KSA940TU
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 150 V 1.5 A 4MHz 1.5 W Through Hole TO-220-3
Datasheet: KSA940TU Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 0.4087 ea
Line Total: USD 20.43 
Availability - 4268
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 50  Multiples: 1
Pack Size: 1
Availability Price Quantity
4268
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 50
Multiples : 1
50 : USD 0.4087
500 : USD 0.3751
1000 : USD 0.3695
3000 : USD 0.3556
5000 : USD 0.3466
8000 : USD 0.3415
15000 : USD 0.3364
25000 : USD 0.3313

   
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We are delighted to provide the KSA940TU from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the KSA940TU and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.KSA940 KSA940 Vertical Deflection Output Power Amplifier Complement to KSC2073 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted C Symbol Parameter Ratings Units V Collector-Base Voltage - 150 V CBO V Collector-Emitter Voltage - 150 V CEO V Emitter-Base Voltage - 5 V EBO I Collector Current - 1.5 A C I Base Current - 0.5 A B P Collector Dissipation (T =25C) 1.5 W C a P Collector Dissipation (T =25C) 25 W C C T Junction Temperature 150 C J T Storage Temperature - 55 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = - 120V, I = 0 - 10 A CBO CB E I Emitter Cut-off Current V = - 5V, I = 0 - 10 A EBO EB C h DC Current Gain V = - 10V, I = - 500mA 40 75 140 FE CE C V (sat) Collector-Emitter Saturation Voltage I = - 500mA, I = - 50mA - 1.5 V CE C B V (on) Base-Emitter ON Voltage V = - 10V, I = - 500mA - 0.65 - 0.75 - 0.85 V BE CE C f Current Gain Bandwidth Product V = - 10V, I = - 500mA 4 MHz T CE C C Output Capacitance V = - 10V, I = 0 55 pF ob CB E f = 1MHz 2000 Fairchild Semiconductor International Rev. A, February 2000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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