NPN Epitaxial Silicon Transistor KSC1008 Features LowFrequency Amplifier Medium Speed Switching www.onsemi.com High CollectorBase Voltage: V = 80 V CBO Collector Current: I = 700 mA C Suffix C means Center Collector (1. Emitter 2. Collector 3. Base) Non Suffix C means Side Collector (1. Emitter 2. Base TO923 3. Collector) CASE 135AN Complement to KSA708 These are PbFree Devices 1 2 3 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted.) A Symbol Parameter Value Unit TO923 LF CASE 135AR V CollectorBase Voltage 80 V CBO 1 2 V CollectorEmitter Voltage 60 V CEO 3 V EmitterBase Voltage 8 V EBO KSC1008: 1. Emitter 2. Base 3. Collector I Collector Current 700 mA C KSC1008C: 1. Emitter 2. Collector 3. Base T Junction Temperature 150 C J T Storage Temperature 55 to 150 C STG MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. AC1 008X THERMAL CHARACTERISTICS YWW (T = 25C unless otherwise noted.) (Note 1) A Symbol Parameter Value Unit P Power Dissipation 800 mW D A = Assembly Code Derate Above 25 C 6.4 mW/ C C1008 = Device Code R Thermal Resistance, 156 C/W JA X = O/Y/YC/G JunctiontoAmbient YWW = Date Code 1. PCB size: FR4, 76 mm 114 mm 1.57 mm (3.0 inch 4.5 inch 0.062 inch) with minimum land pattern size. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: August, 2021 Rev. 2 KSC1008/DKSC1008 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Conditions Min Typ Max Unit BV CollectorBase Breakdown Voltage I = 100 A, I = 0 80 V CBO C E BV CollectorEmitter Breakdown Voltage I = 10 mA, I = 0 60 V CEO C B BV EmitterBase Breakdown Voltage 8 V I = 10 A, I = 0 EBO E C I Collector CutOff Current V = 60 V, I = 0 0.1 A CBO CB E I Emitter CutOff Current V = 5 V, I = 0 0.1 A EBO EB C h DC Current Gain V = 2 V, I = 50 mA 40 400 FE CE C V CollectorEmitter Saturation Voltage I = 500 mA, I = 50 mA 0.2 0.4 V CE(sat) C B V BaseEmitter Saturation Voltage I = 500 mA, I = 50 mA 0.86 1.10 V BE(sat) C B f Current Gain Bandwidth Product V = 10 V, I = 50 mA 30 50 MHz T CE C C Output Capacitance V = 10 V, I = 0, f = 1 MHz 8 pF ob CB E Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. h Classification FE Classification O Y G hFE 70 ~ 140 120 ~ 240 200 ~ 400 ORDERING INFORMATION (Note 2) Part Number Top Mark Package Shipping KSC1008OBU C1008 O TO923 10000 / Bulk Bag (PbFree) KSC1008YBU C1008 Y 10000 / Bulk Bag KSC1008YTA C1008 Y TO923 LR 2000 / FanFold (PbFree) KSC1008CYTA C1008 YC 2000 / FanFold KSC1008GTA C1008 G 2000 / FanFold 2. Affix C means center collector pin. Affix O, Y, G means h classification. Suffix BU means bulk packing, straight lead form. FE Suffix TA means tape and ammo packing, 0.200 in line spacing lead form. www.onsemi.com 2