NPN Epitaxial Silicon Transistor KSC1815 Features Audio Frequency Amplifier and HighFrequency OSC www.onsemi.com Complement to KSA1015 CollectorBase Voltage: V = 50 V CBO This is a PbFree Device MAXIMUM RATINGS (Values are at T = 25C unless otherwise noted.) A Symbol Parameter Value Unit 1. Emitter 2. Collector V CollectorBase Voltage 60 V CBO 3. Base V CollectorEmitter Voltage 50 V CEO 1 2 3 V EmitterBase Voltage 5 V EBO TO92 3 4.83x4.76 I Collector Current 150 mA C LEADFORMED I Base Current 50 mA B CASE 135AR T Junction Temperature 150 C J MARKING DIAGRAM T Storage Temperature Range 55 to 150 C STG Stresses exceeding those listed in the Maximum Ratings table may damage the AC1 device. If any of these limits are exceeded, device functionality should not be 815X assumed, damage may occur and reliability may be affected. YWW THERMAL CHARACTERISTICS (Values are at T = 25C unless otherwise A noted.) (Note 1) Symbol Parameter Max. Unit P Total Device Dissipation 400 mW D Derate Above 25C 3.2 mW/C R Thermal Resistance, Junction to Ambient 312 C/W JA 1. PCB size: FR4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) A = Assembly Code with minimum land pattern size. C1815 = Device Code X = O / Y / GR / L YWW = Date Code ORDERING INFORMATION Device Package Shipping KSC1815YTA TO92 3L 2000 / FanFold (PbFree) Semiconductor Components Industries, LLC, 1999 1 Publication Order Number: June, 2021 Rev. 2 KSC1815/DKSC1815 ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted.) A Symbol Parameter Conditions Min Typ Max Unit BV CollectorBase Voltage I = 1 mA, I = 0 60 V CBO C E BV CollectorEmitter Voltage I = 10 mA, I = 0 50 V CEO C B BV EmitterBase Voltage I = 10 A, I = 0 5 V EBO E C I Collector CutOff Current V = 60 V, I = 0 0.1 A CBO CB E I Emitter CutOff Current V = 5 V, I = 0 0.1 A EBO EB C V (sat) CollectorEmitter Saturation Voltage I = 100 mA, I = 10 mA 0.10 0.25 V CE C B V (sat) BaseEmitter Saturation Voltage I = 100 mA, I = 10 mA 1.0 V BE C B h DC Current Gain V = 6 V, I = 2 mA 70 700 FE1 CE C h V = 6 V, I = 150 mA 25 FE2 CE C f Current Gain Bandwidth Product V = 10 V, I = 1 mA 80 MHz T CE C C Output Capacitance V = 10 V, I = 0, f = 1 MHz 2.0 3.0 pF ob CB E NF Noise Figure V = 6 V, I = 0.1 mA, 1.0 10.0 dB CE C R = 10 k , f = 1 kHz S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. h CLASSIFICATION FE Classification O Y GR L H 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 FE1 www.onsemi.com 2