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X-On Electronics has gained recognition as a prominent supplier of KSD2012GTU Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. KSD2012GTU Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

KSD2012GTU ON Semiconductor

KSD2012GTU electronic component of ON Semiconductor
KSD2012GTU ON Semiconductor
KSD2012GTU Bipolar Transistors - BJT
KSD2012GTU  Semiconductors

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See Product Specifications
Part No. KSD2012GTU
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN Si Transistor Epitaxial
Datasheet: KSD2012GTU Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6468 ea
Line Total: USD 0.65 
Availability - 1933
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1940
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 50
Multiples : 50
50 : USD 0.885
500 : USD 0.5451
1000 : USD 0.4681
2500 : USD 0.439
5000 : USD 0.4146
7500 : USD 0.4084
10000 : USD 0.4022
15000 : USD 0.3963

7
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 8
Multiples : 50
8 : USD 0.6332
112 : USD 0.5779
500 : USD 0.4857
1000 : USD 0.4718
2000 : USD 0.4546

67
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 70
Multiples : 1
70 : USD 0.6855
96 : USD 0.6786
104 : USD 0.6256
500 : USD 0.5458
712 : USD 0.5243
1000 : USD 0.4949
2000 : USD 0.4627
5000 : USD 0.4543

1023
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 128
Multiples : 1
128 : USD 0.5081
129 : USD 0.5029
131 : USD 0.4944
500 : USD 0.4814

26
Ship by Fri. 17 Jan to Wed. 22 Jan
MOQ : 1
Multiples : 1
1 : USD 1.6755
10 : USD 1.4331
30 : USD 1.2823
100 : USD 1.1278
500 : USD 1.0572
1000 : USD 1.0267

1933
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 0.6468
10 : USD 0.5764
100 : USD 0.5302
500 : USD 0.4532
1000 : USD 0.418
2500 : USD 0.4136
5000 : USD 0.4004
25000 : USD 0.3949

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the KSD2012GTU from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the KSD2012GTU and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.KSD2012 KSD2012 Low Frequency Power Amplifier Complement to KSB1366 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current 3 A C I Base Current 0.3 A B P Collector Power Dissipation (T =25C) 25 W C C T Junction Temperature 150 C J T Storage Temperature - 55 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = 50mA, I = 0 60 V CEO C B I Collector Cut-off Current V = 60V, I = 0 100 A CBO CB E I Emitter Cut-off Current V = 7V, I = 0 10 A EBO EB C h DC Current Gain V = 5V, I = 0.5A 100 320 FE1 CE C h V = 5V, I = 3A 20 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 2A, I = 0.2A 0.4 1 V CE C B V (on) Base-Emitter ON Voltage V = 5V, I = 0.5A 0.7 1 V BE CE C f Current Gain Bandwidth Product V = 5V, I = 0.5A 3 MHz T CE C h Classification FE Classification Y G h 100 ~ 200 150 ~ 320 FE1 2000 Fairchild Semiconductor International Rev. A, February 2000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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