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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.KSD882 NPN Epitaxial Silicon Transistor November 2007 KSD882 NPN Epitaxial Silicon Transistor Recommended Applications Audio Frequency Power Amplifier Featuers Low Speed Switcing TO-126 1 Complement to KSB772. 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings* T = 25C unless otherwise noted a Symbol Parameter Ratings Units BV Collector-Base Voltage 40 V CBO BV Collector-Emitter Voltage 30 V CEO BV Emitter-Base Voltage 5 V EBO I Collector Current(DC) 3 A C I Collector Current(Pulse)** 7 A C I Base Current 0.6 A B P Total Device Dissipation(T =25C) 10 W D C Total Device Dissipation(T =25C) 1 W a T , T Junction and Storage Temperature - 55 ~ +150 C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** PW10ms, Duty Cycle50% Electrical Characteristics. T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =500uA, I =0 40 V CBO C E BV Collector-Emitter Breakdown Voltage I =5mA, I =0 30 V CEO C B BV Emitter-Base Breakdown Voltage I =500uA, I =0 5 V EBO E C I Collector Cut-off Current V = 30V, I = 0 1 A CBO CB E I Emitter Cut-off Current V = 3V, I = 0 1 A EBO EB C h *DC Current Gain V = 2V, I = 20mA 30 150 FE1 CE C h V = 2V, I = 1A 60 160 400 FE2 CE C V (sat) *Collector-Emitter Saturation Voltage I = 2A, I = 0.2A 0.3 0.5 V CE C B V (sat) *Base-Emitter Saturation Voltage I = 2A, I = 0.2A 1.0 2.0 V BE C B f Current Gain Bandwidth Product V = 5V, I = 0.1A 90 MHz T CE E C Output Capacitance V = 10V, I = 0 45 pF ob CB E f = 1MHz * Pulse Test: PW350s, Duty Cycle2% Pulsed 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com KSD882 Rev. B 1