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This literature is subject to all applicable copyright laws and is not for resale in any manner.KSH31/31C KSH31/31C General Purpose Amplifier Low Speed Switching Applications Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP31 and TIP31C D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : KSH31 40 V : KSH31C 100 V V Collector-Emitter Voltage CEO : KSH31 40 V : KSH31C 100 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 3 A C I Collector Current (Pulse) 5 A CP I Base Current 1 A B P Collector Dissipation (T =25C) 15 W C C Collector Dissipation (T =25C) 1.56 W a T Junction Temperature 150 C J T Storage Temperature - 65 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : KSH31 I = 30mA, I = 0 40 V C B : KSH31C 100 V I Collector Cut-off Current CEO : KSH31 V = 40V, I = 0 50 A CE B : KSH31C V = 60V, I = 0 50 A CE B I Collector Cut-off Current CES : KSH31 V = 40V, V = 0 20 A CE BE : KSH31C V = 100V, V = 0 20 A CE BE I Emitter Cut-off Current V = 5V, I = 0 1 mA EBO BE C h * DC Current Gain V = 4V, I = 1A 25 FE CE C V = 4V, I = 3A 10 50 CE C V (sat) * Collector-Emitter Saturation Voltage I = 3A, I = 375mA 1.2 V CE C B V (on) * Base-Emitter On Voltage V = 4A, I = 3A 1.8 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 500mA 3 MHz T CE C * Pulse Test: PW300 s, Duty Cycle2% 2002 Fairchild Semiconductor Corporation Rev. B3, October 2002