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This literature is subject to all applicable copyright laws and is not for resale in any manner.KSH32/32C KSH32/32C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) D-PAK I-PAK 11 Electrically Similar to Popular TIP32 and TIP32C 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : KSH32 - 40 V CBO : KSH32C - 100 V V Collector-Emitter Voltage : KSH32 - 40 V CEO : KSH32C - 100 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 3 A C I Collector Current (Pulse) - 5 A CP I Base Current - 1 A B P Collector Dissipation (T =25C) 15 W C C Collector Dissipation (T =25C) 1.56 W a T Junction Temperature 150 C J T Storage Temperature - 65 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : KSH32 I = - 30mA, I = 0 -40 V C B : KSH32C -100 V I Collector Cut-off Current CEO -50 A : KSH32 V = - 40V, I = 0 CE B : KSH32C V = - 60V, I = 0 -50 A CE B I Collector Cut-off Current CES : KSH32 V = - 40V, V = 0 -20 A CE BE : KSH32C V = - 100V, V = 0 -20 A CE BE I Emitter Cut-off Current V = - 5V, I = 0 -1 mA EBO BE C 25 h * DC Current Gain V = - 4V, I = - 1A FE CE C V = - 4V, I = - 3A 10 50 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 3, I = - 375mA -1.2 V CE C B V (on) * Base-Emitter On Voltage V = - 4A, I = - 3A -1.8 V BE CE C f Current Gain Bandwidth Product V = -10V, I = - 500mA 3 MHz T CE C * Pulse Test: PW300 s, Duty Cycle2% 2002 Fairchild Semiconductor Corporation Rev. A4, October 2002