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Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 3.0 V EBO P Collector Power Dissipation (T =25C) 350 mW C a Derate above 25C2.8mW/C P Collector Power Dissipation (T =25C) 1.0 W C C Derate above 25C8.0W/C T Junction Temperature 150 C J T Storage Temperature -55~150 C STG Rth(j-c) Thermal Resistance, Junction to Case 125 C/W Rth(j-a) Thermal Resistance, Junction to Ambient 357 C/W Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =100 A, I =0 30 V CBO C E BV Collector-Emitter Breakdown Voltage I =1mA, I =0 25 V CEO C B BV Emitter-Base Breakdown Voltage I =10 A, I =0 3.0 V EBO E C I Collector Cut-off Current V =25V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =2V, I =0 100 nA EBO EB C h DC Current Gain V =10V, I =4mA 60 FE CE C V (sat) Collector-Emitter Saturation Voltage I =4mA, I =0.4mA 0.5 V CE C B V (on) Base-Emitter On Voltage V =10V, I =4mA 0.95 V BE CE C f Current Gain Bandwidth Product V =10V, I =4mA, f=100MHz 650 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 0.7 pF ob CB E C Collector Base Feedback Capacitance V =10V, I =0, f=1MHz 0.35 0.65 pF rb CB E C Collector Base Time Constant V =10V, I =4mA, 9.0 ps crbb CB C f=31.8MHz * Pulse Test: PW300 s, Duty Cycle2% 2002 Fairchild Semiconductor Corporation Rev. A2, September 2002