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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.KST3904 NPN Epitaxial Silicon Transistor November 2011 KST3904 NPN Epitaxial Silicon Transistor Features General Purpose Transistor 3 Marking 2 1A SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings T = 25C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 200 mA C P Collector Power Dissipation 350 mW C T Storage Temperature Range -55 to 150 C STG Electrical Characteristics T =25 C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =10 A, I =0 60 V CBO C E BV * Collector-Emitter Breakdown Voltage I =1mA, I =0 40 V CEO C B BV Emitter-Base Breakdown Voltage I =10 A, I =0 6 V EBO E C I Collector Cut-off Current V =30V, V =3V 50 nA CEX CE EB h * DC Current Gain V =1V, I =0.1mA 40 FE CE C V =1V, I =1mA 70 CE C V =1V, I =10mA 100 300 CE C V =1V, I =50mA 60 CE C V =1V, I =100mA 30 CE C V (sat) * Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.2 V CE C B I =50mA, I =5mA 0.3 V C B V (sat) * Base-Emitter Saturation Voltage I =10mA, I =1mA 0.65 0.85 V BE C B I =50mA, I =5mA 0.95 V C B C Output Capacitance V =5V, I =0, f=1MHz 4 pF ob CB E f Current Gain-Bandwidth Product V =20V, I =10mA, f=100MHz 300 MHz T CE C NF Noise Figure I =100A, V =5V, R =1K, 5dB C CE S f=10Hz to 15.7KHz t Turn On Time V =3V, V =0.5V, 70 ns ON CC BE I =10mA, I =1mA C B1 t Turn Off Time V =3V, I =10mA, 250 ns OFF CC C I =I =1mA B1 B2 * Pulse Test: Pulse Width300s, Duty Cycle2% 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com KST3904 Rev. A2 1