KST42 ON Semiconductor

KST42/43 KST42/43 High Voltage Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted a Symbol Parameter Value Units V Collector Base Voltage CBO : KST42 300 V : KST43 200 V V Collector-Emitter Voltage CEO : KST42 300 V : KST43 200 V V Emitter-Base Voltage 6 V EBO I Collector Current 500 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 C STG R (j-a) Thermal Resistance junction to Ambient 357 C/W TH Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I =100 A, I =0 CBO C E : KST42 300 V : KST43 200 V BV * Collector -Emitter Breakdown Voltage I =1mA, I =0 CEO C B : KST42 300 V : KST43 200 V BV Emitter-Base Breakdown Voltage I =100 A, I =0 6 V EBO E C I Collector Cut-off Current V =200V, I=0 0.1 A CBO CB E I Emitter Cut-off Current V =5V, I =0 0.1 A EBO CB C h * DC Current Gain V =10V, I =1mA 25 FE CE C V =10V, I =10mA 40 CE C V =10V, I =30mA 40 CE C V (sat) * Collector-Emitter Saturation Voltage I =20mA, I =2mA 0.5 V CE C B V (sat) * Base-Emitter Saturation Voltage I =20mA, I =2mA 0.9 V BE C B C Output Capacitance ob : KST42 V =20V, I =0 3 pF CB E : KST43 f=1MHz 4 pF f Current Gain Bandwidth Product V =20V, I =10mA 50 MHz T CE C f=100MHz * Pulse Test: PW300 s, Duty Cycle2% 2002 Fairchild Semiconductor Corporation Rev. A2, November 2002KST42/43 Marking Code Type KST42 KST43 Mark 1D 1E Marking 1D 2002 Fairchild Semiconductor Corporation Rev. A2, November 2002