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Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -600 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 C STG Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I = -0.1mA, I =0 -40 V CBO C E BV * Collector-Emitter Breakdown Voltage I = -1.0mA, I =0 -40 V CEO C B BV Emitter-Base Breakdown Voltage I = -0.1mA, I =0 -5 V EBO E C I Base Cut-off Current V = -35V, V = -0.4V -0.1 A BEV CE BE I Collector Cut-off Current V = -35V, V = -0.4V -0.1 A CEX CE BE h DC Current Gain V = -1V, I = -0.1mA 30 FE CE C V = -1V, I = -1.0mA 60 CE C V = -1V, I = -10mA 100 CE C *V = -2V, IC= -150mA 100 300 CE *V = -2V, I = -500mA 20 CE C V (sat) * Collector-Emitter Saturation Voltage I = -150mA, I = -15mA -0.4 V CE C B I = -500mA, I = -50mA -0.75 V C B V (sat) * Base-Emitter Saturation Voltage I = -150mA, I = -15mA -0.75 -0.95 V BE C B I = -500mA, I = -50mA -1.3 V C B f Current Gain Bandwidth Product I = -20mA, V = -10V 200 MHz T C CE f=100MHz C Output Capacitance V = -10V, I =0 8.5 pF ob CB E f=140KHz t Turn On Time V = -30V, V = -2V 35 ns ON CC BE I = -150mA, I = -15mA C B1 t Turn Off Time V = -30V, I = -150mA 255 ns OFF CC C I =I = -15mA B1 B2 * Pulse Test: Pulse Width300 s, Duty Cycle2% Marking 2T 2002 Fairchild Semiconductor Corporation Rev. A2, November 2002