KST5086/5087 KST5086/5087 Low Noise Transistor 3 2 SOT-23 1 PNP Epitaxial Silicon Transistor 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings T =25C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -3 V EBO I Collector Current -50 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 C STG Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I = -100 A, I =0 -50 V CBO C E BV Collector-Emitter Breakdown Voltage I = -1mA, I =0 -50 V CEO C B I Collector Cut-off Current V = -20V, I =0 -50 nA CBO CB E h DC Current Gain FE : KST5086 V = -5V, I = -100 A 150 500 CE C : KST5087 250 800 : KST5086 V = -5V, I = -1mA 150 CE C : KST5087 250 : KST5086 V = -5V, I = -10mA 150 CE C : KST5087 250 V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -1mA -0.3 V CE C B V (sat) Base-Emitter Saturation Voltage I = -10mA, I = -1mA -0.85 V BE C B f Current Gain Bandwidth Product V = -5V, I = -500 A 40 MHz T CE C f=20MHz C Output Capacitance V = -5V, I =0 4pF ob CB E f=100MHz NF Noise Figure : KST5086 I = -100 A, V = -5V 3 dB C CE R =3K , f=1KHz 2 dB : KST5087 S : KST5087 V = -5V, I = -20mA 2 dB CE C R =10K , f=10Hz to 15.7KHz S Marking Code Type KST5086 KST5087 Mark 2P 2Q Marking 2P 2002 Fairchild Semiconductor Corporation Rev. A2, November 2002KST5086/5087 Typical Characteristics 1000 -10 VCE = -5V KST5087 I = 10 I C B 100 KST5086 -1 VBE(sat) 10 -0.1 VCE(sat) 1 -0.01 -0.1 -1 -10 -100 -0.1 -1 -10 -100 I mA , COLLECTOR CURRENT I mA , COLLECTOR CURRENT C C Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -100 100 f = 100KHz I = 0 E VCE = -5V -10 10 -1 1 -0.1 0.1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -10 -100 V V , BASE-EMITTER VOLTAGE BE V V , COLLECTOR-BASE VOLTAGE CB Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance 1000 V = -5V CE 100 10 1 -0.1 -1 -10 -100 I mA , COLLECTOR CURRENT C Figure 5. Current Gain Bandwidth Product 2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 I mA , COLLECTOR CURRENT C fT MHz , CURRENT GAIN BANDWIDTH PRODUCT hFE, DC CURRENT GAIN V (sat), V (sat) V , SATURATION VOLTAGE BE CE Cob pF , CAPACITANCE