MAC15SD, MAC15SM, MAC15SN Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave MAC15SD, MAC15SM, MAC15SN THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoCase 2.0 C/W R JC JunctiontoAmbient 62.5 R JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current I , mA DRM I 0.01 (V = Rated V , V Gate Open) T = 25C RRM D DRM RRM J 2.0 T = 110C J ON CHARACTERISTICS Peak On-State Voltage (Note 2) (I = 21A) V 1.8 V TM TM Gate Trigger Current (Continuous dc) (V = 12 V, R = 100 ) I mA D L GT 2.0 5.0 MT2(+), G(+) 3.0 5.0 MT2(+), G() 3.0 5.0 MT2(), G() Hold Current (V = 12 V, Gate Open, Initiating Current = 150mA) I 3.0 10 mA D H Latching Current (V = 24V, I = 5mA) I mA D G L 5.0 15 MT2(+), G(+) 10 20 MT2(+), G() 5.0 15 MT2(), G() Gate Trigger Voltage (Continuous dc) (V = 12 V, R = 100 ) V V GT D L 0.45 0.62 1.5 MT2(+), G(+) 0.45 0.60 1.5 MT2(+), G() 0.45 0.65 1.5 MT2(), G() DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (di/dt)c 8.0 10 A/ms (V = 400V, I = 3.5A, Commutating dv/dt = 10V /sec, D TM Gate Open, T = 110C, f= 500Hz, Snubber: C = 0.01 F, R =15 , see Figure 15) J S S Critical Rate of Rise of Off-State Voltage dv/dt 25 75 V/ s (V = Rate V , Exponential Waveform, R = 510 , T = 110C) D DRM GK J 2. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.