MAC97 Series Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO92 package which is readily adaptable for use in MAC97 Series THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 75 C/W JC Thermal Resistance, Junction toAmbient R 200 C/W JA Maximum Lead Temperature for Soldering Purposes for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current I , I DRM RRM (V = Rated V , V Gate Open) T = 25C 10 A D DRM RRM J T = +110C 100 A J ON CHARACTERISTICS Peak OnState Voltage V 1.9 V TM (I = .85 A Peak Pulse Width 2.0 ms, Duty Cycle 2.0%) TM Gate Trigger Current (Continuous dc) I mA GT (V = 12 Vdc, R = 100 ) D L MT2(+), G(+) 5.0 MT2(+), G() 5.0 MT2(), G() 5.0 MT2(), G(+) 7.0 Gate Trigger Voltage (Continuous dc) V V GT (V = 12 Vdc, R = 100 ) D L MT2(+), G(+) All Types .66 2.0 MT2(+), G() All Types .77 2.0 MT2(), G() All Types .84 2.0 MT2(), G(+) All Types .88 2.5 Gate NonTrigger Voltage V 0.1 V GD (V = 12 V, R = 100 , T = 110C) D L J All Four Quadrants Holding Current I 1.5 10 mA H (V = 12 Vdc, Initiating Current = 200 mA, Gate Open) D Turn-On Time t 2.0 s gt (V = Rated V , I = 1.0 A pk, I = 25 mA) D DRM TM G DYNAMIC CHARACTERISTICS Critical RateofRise of Commutation Voltage dV/dt(c) 5.0 V/ s (V = Rated V , I = .84 A, D DRM TM Commutating di/dt = .3 A/ms, Gate Unenergized, T = 50C) C Critical Rate of Rise of OffState Voltage dv/dt 25 V/ s (V = Rated V , T = 110C, Gate Open, Exponential Waveform D DRM C