MBR4045PT ON Semiconductor

MBR4045PT SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage MBR4045PT MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage V 45 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 125C) Per Diode 20 R C Per Device 40 Peak Repetitive Forward Current, I 40 A FRM (Rated V , Square Wave, 20 kHz R T = 90C) Per Diode C NonRepetitive Peak Surge Current I 400 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Current, I 2.0 A RRM (2.0 s, 1.0 kHz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature (Note 1) T 65 to +175 C J Peak Surge Junction Temperature T 175 C J(pk) (Forward Current Applied) Voltage Rate of Change dv/dt 10,000 V/ s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Conditions Symbol Max Unit Maximum Thermal Resistance, JunctiontoCase Minimum Pad R 1.4 JC C/W Maximum Thermal Resistance, JunctiontoAmbient Minimum Pad R 55 JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Instantaneous Forward Voltage (Note 2) V V F (i = 20 A, T = 25C) 0.53 0.70 F J (i = 20 A, T = 125C) 0.46 0.60 F J (i = 40 A, T = 25C) 0.64 0.80 F J (i = 40 A, T = 125C) 0.62 0.75 F J Instantaneous Reverse Current (Note 2) i mA R (Rated DC Voltage, T = 25C) 0.09 1.0 J (Rated DC Voltage, T = 125C) 30 50 J