MBRB30H30CT-1G, NRVBB30H30CT-1G, MBR30H30CTG Switch-mode Power Rectifiers 30 V, 30 A www.onsemi.com Features and Benefits SCHOTTKY BARRIER Low Forward Voltage RECTIFIER Low Power Loss/High Efficiency 30 AMPERES, 30 VOLTS High Surge Capacity 1 150C Operating Junction Temperature 2, 4 30 A Total (15 A Per Diode Leg) 3 GuardRing for Stress Protection NRVBB Prefix for Automotive and Other Applications Requiring 4 MARKING Unique Site and Control Change Requirements AECQ101 DIAGRAMS Qualified and PPAP Capable 2 These Devices are PbFree and are RoHS Compliant I PAK (TO262) AYWW CASE 418D Applications B30H30G STYLE 3 AKA Power Supply Output Rectification Power Management 1 2 3 Instrumentation 4 Mechanical Characteristics: Case: Epoxy, Molded Epoxy Meets UL 94 V0 0.125 in TO220 2 Weight: 1.5 Grams (I PAK) (Approximately) AYWW CASE 221A B30H30G 1.9 Grams (TO220) (Approximately) STYLE 6 AKA Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 1 2 Lead Temperature for Soldering Purposes: 3 260C Max. for 10 Seconds A = Assembly Location Y = Year WW = Work Week B30H30 = Device Code G = PbFree Package AKA = Diode Polarity ORDERING AND MARKING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 6 MBRB30H30CT1/DMBRB30H30CT1G, NRVBB30H30CT1G, MBR30H30CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 30 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V ) T = 138C 15 R C Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz) 30 R Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 260 Operating Junction Temperature (Note 1) T 55 to +150 C J Storage Temperature T 55 to +150 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Controlled Avalanche Energy (see test conditions in Figures 9 and 10) W 250 mJ AVAL ESD Ratings: V Machine Model = C > 400 Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Rating Symbol Value Unit Maximum Thermal Resistance C/W JunctiontoCase R 2.0 JC JunctiontoAmbient 70 R JA ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (I = 15 A, T = 25C) 0.48 F C (I = 15 A, T = 125C) 0.40 F C (I = 30 A, T = 25C) 0.55 F C (I = 30 A, T = 125C) 0.53 F C Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated DC Voltage, T = 25C) 0.8 C (Rated DC Voltage, T = 125C) 130 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2