Surface Mount Schottky Power Rectifier MBRS130T3G, NRVBS130T3G, NRVBS130N www.onsemi.com This device employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features SCHOTTKY BARRIER epitaxial construction with oxide passivation and metal overlay RECTIFIER contact. Ideally suited for low voltage, high frequency rectification, or 1.0 AMPERE as free wheeling and polarity protection diodes in surface mount 30 VOLTS applications where compact size and weight are critical to the system. Features Small Compact Surface Mountable Package with JBend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction SMB Very Low Forward Voltage Drop (0.6 Volts Max 1.0 A, T = 25C) J CASE 403A Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection MARKING DIAGRAM NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 AYWW Qualified and PPAP Capable* B13 These are PbFree Devices Mechanical Characteristics A = Assembly Location** Case: Epoxy, Molded Y = Year Weight: 95 mg (approximately) WW = Work Week Finish: All External Surfaces Corrosion Resistant and Terminal = PbFree Package Leads are Readily Solderable (Note: Microdot may be in either location) Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is Shipped in 12 mm Tape and Reel, 2500 units per reel stamped in the package bottom (molding ejecter pin), Cathode Polarity Band the front side assembly code may be blank. ORDERING INFORMATION Package Shipping Device 2500 / MBRS130T3G SMB Tape & Reel (PbFree) NRVBS130T3G* SMB 2500 / (PbFree) Tape & Reel NRVBS130NT3G* SMB 2500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: December, 2019 Rev. 10 MBRS130T3/DMBRS130T3G, NRVBS130T3G, NRVBS130N MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 30 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 1.0 A F(AV) (T = 115C) L NonRepetitive Peak Surge Current I 40 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating Junction Temperature T 65 to +125 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance, JunctiontoLead R 12 C/W JL (T = 25C) L ELECTRICAL CHARACTERISTICS Rating Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) V 0.6 V F (i = 1.0 A, T = 25C) F J Maximum Instantaneous Reverse Current (Note 1) i mA R (Rated dc Voltage, T = 25C) 1.0 J (Rated dc Voltage, T = 100C) 10 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2