Surface Mount Schottky Power Rectifier MBRS140T3G, SBRS8140N, SBRS8140T3G Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal to silicon power diode. www.onsemi.com Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, SCHOTTKY BARRIER high frequency rectification, or as free wheeling and polarity RECTIFIER protection diodes in surface mount applications where compact size 1.0 AMPERE, 40 VOLTS and weight are critical to the system. Features Small Compact Surface Mountable Package with JBend Leads Rectangular Package for Automated Handling SMB Highly Stable Oxide Passivated Junction CASE 403A Very Low Forward Voltage Drop (0.55 V Max 1.0 A, T = 25C) J MARKING DIAGRAM Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection AYWW B14 ESD Ratings: Human Body Model = 3B (> 8000 V) Machine Model = C (> 400 V) SBRS8 Prefix for Automotive and Other Applications Requiring B14 = Specific Device Code A = Assembly Location** Unique Site and Control Change Requirements AECQ101 Y = Year Qualified and PPAP Capable* WW = Work Week These are PbFree Devices = PbFree Pac (Note: Microdot may be in either location) Mechanical Characteristics **The Assembly Location code (A) is front side Case: Epoxy, Molded optional. In cases where the Assembly Location is Weight: 95 mg (approximately) stamped in the package, the front side assembly code may be blank. Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: ORDERING INFORMATION 260C Max. for 10 Seconds Device Package Shipping Cathode Polarity Band 2,500 / MBRS140T3G SMB Tape & Reel (PbFree) 2,500 / SBRS8140T3G* SMB (PbFree) Tape & Reel SMB 2,500 / SBRS8140NT3G* (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: March, 2020 Rev. 13 MBRS140T3/DMBRS140T3G, SBRS8140N, SBRS8140T3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 40 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) T = 115C 1.0 L NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 40 Operating Junction Temperature T 65 to +125 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance JunctiontoLead C/W R JL (T = 25C) 12 L ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) V V F (i = 1.0 A, T = 25C) 0.6 F J Maximum Instantaneous Reverse Current (Note 1) i mA R (Rated dc Voltage, T = 25C) 1.0 J (Rated dc Voltage, T = 100C) 10 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 2 2 T = 125C T = 100C C C T = 125C T = 100C C C 0.2 0.2 T = 25C T = 25C C C T = -40C T = -40C C C T = -55C C T = -55C C 0.02 0.02 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 V , INSTANTANEOUS FORWARD VOLTAGE (VOLTS) V , MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) F F Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F i , INSTANTANEOUS FORWARD CURRENT (AMPS) F