X-On Electronics has gained recognition as a prominent supplier of MBT2222ADW1T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MBT2222ADW1T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MBT2222ADW1T1G ON Semiconductor

MBT2222ADW1T1G electronic component of ON Semiconductor
MBT2222ADW1T1G ON Semiconductor
MBT2222ADW1T1G Bipolar Transistors - BJT
MBT2222ADW1T1G  Semiconductors

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See Product Specifications
Part No. MBT2222ADW1T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 600mA 75V Dual NPN
Datasheet: MBT2222ADW1T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
30000: USD 0.0235 ea
Line Total: USD 705 
Availability - 34920
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 30000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
34920
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 30000
Multiples : 3000
30000 : USD 0.0235
60000 : USD 0.023
120000 : USD 0.0228
150000 : USD 0.0226
270000 : USD 0.0225
510000 : USD 0.0224

514
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 10
Multiples : 10
10 : USD 0.094
100 : USD 0.0742
300 : USD 0.0552
3000 : USD 0.0439
6000 : USD 0.0394
9000 : USD 0.0371

12967
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 1188
Multiples : 1
1188 : USD 0.0547
1202 : USD 0.0541
1214 : USD 0.0536
3000 : USD 0.0323
6000 : USD 0.0277

29100
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 30000
Multiples : 30000
30000 : USD 0.0305
60000 : USD 0.0299
120000 : USD 0.0296
150000 : USD 0.0294
270000 : USD 0.0293

43650
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 14085
Multiples : 1
14085 : USD 0.0332

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MBT2222ADW1T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBT2222ADW1T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MBT2222ADW1, NSVBT2222ADW1 General Purpose Transistor NPN Silicon MBT2222ADW1, NSVBT2222ADW1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (I = 10 mAdc, I = 0) V 40 Vdc C B (BR)CEO Collector Base Breakdown Voltage (I = 10 Adc, I = 0) V 75 Vdc C E (BR)CBO Emitter Base Breakdown Voltage, (I = 10 Adc, I = 0) V 6.0 Vdc E C (BR)EBO Collector Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) I 10 nAdc CE EB(off) CEX Collector Cutoff Current I Adc CBO (V = 60 Vdc, I = 0) 0.01 CB E (V = 60 Vdc, I = 0, T = 125C) 10 CB E A Emitter Cutoff Current (V = 3.0 Vdc, I = 0) I 100 nAdc EB C EBO Base Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) I 20 nAdc CE EB(off) BL ON CHARACTERISTICS DC Current Gain h FE (I = 0.1 mAdc, V = 10 Vdc) 35 C CE (I = 1.0 mAdc, V = 10 Vdc) 50 C CE (I = 10 mAdc, V = 10 Vdc) 75 C CE (I = 10 mAdc, V = 10 Vdc, T = 55C) 35 C CE A (I = 150 mAdc, V = 10 Vdc) (Note 2) 100 300 C CE (I = 150 mAdc, V = 1.0 Vdc) (Note 2) 50 C CE (I = 500 mAdc, V = 10 Vdc) (Note 2) 40 C CE Collector Emitter Saturation Voltage (Note 2) V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 0.3 C B (I = 500 mAdc, I = 50 mAdc) 1.0 C B Base Emitter Saturation Voltage (Note 2) V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 0.6 1.2 C B (I = 500 mAdc, I = 50 mAdc) 2.0 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (Note 3) f 300 MHz T (I = 20 mAdc, V = 20 Vdc, f = 100 MHz) C CE Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 8.0 pF CB E obo Input Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 25 pF EB C ibo Input Impedance h k ie (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 2.0 8.0 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) 0.25 1.25 C CE 4 Voltage Feedback Ratio h X 10 re (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 8.0 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) 4.0 C CE Small Signal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 50 300 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) 75 375 C CE Output Admittance h mhos oe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 5.0 35 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) 25 200 C CE Collector Base Time Constant (I = 20 mAdc, V = 20 Vdc, f = 31.8 MHz) rb, C 150 ps E CB c Noise Figure (I = 100 Adc, V = 10 Vdc, R = 1.0 k , f = 1.0 kHz) NF 4.0 dB C CE S SWITCHING CHARACTERISTICS Delay Time t 10 d (V = 30 Vdc, V = 0.5 Vdc, CC BE(off) ns I = 150 mAdc, I = 15 mAdc) C B1 Rise Time t 25 r Storage Time t 225 s (V = 30 Vdc, I = 150 mAdc, CC C ns I = I = 15 mAdc) B1 B2 Fall Time t 60 f 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 3. f is defined as the frequency at which h extrapolates to unity. T fe

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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