MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose www.onsemi.com Transistors MARKING The MBT3904DW1 and MBT3904DW2 devices are a spinoff of DIAGRAM our popular SOT23/SOT323 threeleaded device. It is designed for 6 general purpose amplifier applications and is housed in the SOT363 SOT363/SC88/ sixleaded surface mount package. By putting two discrete devices in XX M 6 SC706 one package, this device is ideal for lowpower surface mount CASE 419B applications where board space is at a premium. 1 1 Features XX = MA for MBT3904DW1T1G h , 100300 FE MJ for MBT3904DW2T1G Low V , 0.4 V M = Date Code CE(sat) = PbFree Package Simplifies Circuit Design (Note: Microdot may be in either location) Reduces Board Space Reduces Component Count (3) (2) (1) Available in 8 mm, 7inch/3,000 Unit Tape and Reel S and NSV Prefix for Automotive and Other Applications Requiring Q Q 1 2 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS (4) (5) (6) Compliant MBT3904DW1T1 MAXIMUM RATINGS STYLE 1 (3) (2) (1) Rating Symbol Value Unit CollectorEmitter Voltage V 40 Vdc CEO Q 2 CollectorBase Voltage V 60 Vdc CBO Q 1 EmitterBase Voltage V 6.0 Vdc EBO Collector Current Continuous I 200 mAdc C (4) (5) (6) Electrostatic Discharge ESD HBM Class 2 MM Class B MBT3904DW2T1 STYLE 27 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Device Package Shipping THERMAL CHARACTERISTICS MBT3904DW1T1G, 3000 / SOT363 Characteristic Symbol Max Unit MBT3904DW2T1G Tape & Reel (PbFree) Total Package Dissipation (Note 1) P 150 mW D SMBT3904DW1T1G SOT363 3000 / T = 25C A (PbFree) Tape & Reel Thermal Resistance, R 833 C/W JA JunctiontoAmbient NSVMBT3904DW1T3G 10000 / SOT363 Tape & Reel (PbFree) Junction and Storage T , T 55 to +150 C J stg Temperature Range For information on tape and reel specifications, 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum including part orientation and tape sizes, please recommended footprint. s refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2015 Rev. 11 MBT3904DW1T1/DMBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 2) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 40 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 60 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 6.0 E C Base Cutoff Current I nAdc BL (V = 30 Vdc, V = 3.0 Vdc) 50 CE EB Collector Cutoff Current I nAdc CEX (V = 30 Vdc, V = 3.0 Vdc) 50 CE EB ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) 40 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 70 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.3 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 300 C CE Output Capacitance C pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) 4.0 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 8.0 EB C Input Impedance h k ie (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 1.0 10 CE C 2.0 12 4 Voltage Feedback Ratio h X 10 re (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 0.5 8.0 CE C 0.1 10 SmallSignal Current Gain h fe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 100 400 CE C 100 400 Output Admittance h mhos oe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 1.0 40 CE C 3.0 60 Noise Figure NF dB (V = 5.0 Vdc, I = 100 Adc, R = 1.0 k , f = 1.0 kHz) 5.0 CE C S 2. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%. www.onsemi.com 2