MBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin off of our popular SOT23/SOT323 threeleaded device. It is designed for general purpose amplifier applications and is housed in the SOT 363 www.onsemi.com sixleaded surface mount package. By putting two discrete devices in one package, this device is ideal for lowpower surface mount MARKING applications where board space is at a premium. DIAGRAM Features 6 h , 100300 FE SOT363/SC88 XX M Low V , 0.4 V CASE 419B CE(sat) STYLE 1 Simplifies Circuit Design 1 Reduces Board Space Reduces Component Count XX = Device Code M = Date Code Available in 8 mm, 7inch/3,000 Unit Tape and Reel = PbFree Package S Prefix for Automotive and Other Applications Requiring Unique (Note: Microdot may be in either location) Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 6 of this data sheet. MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V 40 Vdc CEO Collector Base Voltage V 40 Vdc CBO Emitter Base Voltage V 5.0 Vdc EBO Collector Current Continuous I 200 mAdc C Electrostatic Discharge ESD HBM Class 2 MM Class B Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Package Dissipation (Note 1) P 150 mW D T = 25C A Thermal Resistance, R 833 C/W JA JunctiontoAmbient Junction and Storage T , T 55 to +150 C J stg Temperature Range 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: August, 2019 Rev. 7 MBT3906DW1T1/DMBT3906DW1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 2) V 40 Vdc (BR)CEO Collector Base Breakdown Voltage V 40 Vdc (BR)CBO Emitter Base Breakdown Voltage V 5.0 Vdc (BR)EBO Base Cutoff Current I 50 nAdc BL Collector Cutoff Current I 50 nAdc CEX ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) 60 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 80 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.25 C B (I = 50 mAdc, I = 5.0 mAdc) 0.4 C B Base Emitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 250 MHz T Output Capacitance C 4.5 pF obo Input Capacitance C 10.0 pF ibo Input Impedance h k ie (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 2.0 12 CE C 4 Voltage Feedback Ratio h X 10 re (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 0.1 10 CE C Small Signal Current Gain h fe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 100 400 CE C Output Admittance h mhos oe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 3.0 60 CE C Noise Figure NF dB (V = 5.0 Vdc, I = 100 Adc, R = 1.0 k , f = 1.0 kHz) 4.0 CE C S SWITCHING CHARACTERISTICS Delay Time (V = 3.0 Vdc, V = 0.5 Vdc) t 35 CC BE d ns Rise Time (I = 10 mAdc, I = 1.0 mAdc) t 35 C B1 r Storage Time (V = 3.0 Vdc, I = 10 mAdc) t 225 CC C s ns Fall Time (I = I = 1.0 mAdc) t 75 B1 B2 f 2. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%. www.onsemi.com 2