MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT 23/SOT323 three-leaded device. It is designed for general MBT3946DW1T1G, SMBT3946DW1T1G Table 3. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 2) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) (NPN) 40 C B (I = 1.0 mAdc, I = 0) (PNP) 40 C B Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) (NPN) 60 C E (I = 10 Adc, I = 0) (PNP) 40 C E Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) (NPN) 6.0 E C 5.0 (I = 10 Adc, I = 0) (PNP) E C Base Cutoff Current I nAdc BL (V = 30 Vdc, V = 3.0 Vdc) (NPN) 50 CE EB (V = 30 Vdc, V = 3.0 Vdc) (PNP) 50 CE EB Collector Cutoff Current I nAdc CEX (V = 30 Vdc, V = 3.0 Vdc) (NPN) 50 CE EB (V = 30 Vdc, V = 3.0 Vdc) (PNP) 50 CE EB ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) (NPN) 40 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 70 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE (I = 0.1 mAdc, V = 1.0 Vdc) (PNP) 60 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 80 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) (NPN) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.3 C B (I = 10 mAdc, I = 1.0 mAdc) (PNP) 0.25 C B (I = 50 mAdc, I = 5.0 mAdc) 0.4 C B Base Emitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) (NPN) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B (I = 10 mAdc, I = 1.0 mAdc) (PNP) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALL-SIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) (NPN) 300 C CE (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) (PNP) 250 C CE Output Capacitance C pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) (NPN) 4.0 CB E (V = 5.0 Vdc, I = 0, f = 1.0 MHz) (PNP) 4.5 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) (NPN) 8.0 EB C (V = 0.5 Vdc, I = 0, f = 1.0 MHz) (PNP) 10.0 EB C Input Impedance h k ie (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) (NPN) 1.0 10 CE C (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) (PNP) 2.0 12 CE C 4 Voltage Feedback Ratio h X 10 re (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) (NPN) 0.5 8.0 CE C (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) (PNP) 0.1 10 CE C Small Signal Current Gain h fe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) (NPN) 100 400 CE C (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) (PNP) 100 400 CE C