X-On Electronics has gained recognition as a prominent supplier of MBT6429DW1T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MBT6429DW1T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MBT6429DW1T1G ON Semiconductor

MBT6429DW1T1G electronic component of ON Semiconductor
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Part No.MBT6429DW1T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 200mA 55V NPN
Datasheet: MBT6429DW1T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0468 ea
Line Total: USD 140.4 
Availability - 5820
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
23280
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 31
Multiples : 1
31 : USD 0.1677
46 : USD 0.114
46 : USD 0.1129
100 : USD 0.0578
250 : USD 0.0572
500 : USD 0.0567
1000 : USD 0.0537
3000 : USD 0.0515
6000 : USD 0.0494
15000 : USD 0.0473

5820
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0468
6000 : USD 0.0338
9000 : USD 0.032
15000 : USD 0.0314

2429
Ship by Tue. 24 Dec to Thu. 26 Dec
MOQ : 1
Multiples : 1
1 : USD 0.198
10 : USD 0.1254
100 : USD 0.0583
1000 : USD 0.0528
3000 : USD 0.0396
9000 : USD 0.0341
24000 : USD 0.0319

32
Ship by Tue. 24 Dec to Thu. 26 Dec
MOQ : 1
Multiples : 1
1 : USD 0.266
10 : USD 0.1778
20 : USD 0.1456
100 : USD 0.0882
385 : USD 0.0448

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
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Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
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We are delighted to provide the MBT6429DW1T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBT6429DW1T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MBT6429DW1T1G is a N-Channel 100V MOSFET produced by ON Semiconductor. It has a 175A rated drain current and a 0.0048 Ohm typical on resistance. The MOSFET has a Trench-FET technology with an integrated Schottky diode. The maximum power dissipation is 6 Watts, with an operating junction temperature of 150°C. This part is primarily used in high side switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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