X-On Electronics has gained recognition as a prominent supplier of MBT6429DW1T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MBT6429DW1T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MBT6429DW1T1G ON Semiconductor

MBT6429DW1T1G electronic component of ON Semiconductor
MBT6429DW1T1G ON Semiconductor
MBT6429DW1T1G Bipolar Transistors - BJT
MBT6429DW1T1G  Semiconductors

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See Product Specifications
Part No. MBT6429DW1T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 200mA 55V NPN
Datasheet: MBT6429DW1T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
418: USD 0.1556 ea
Line Total: USD 65.04 
Availability - 23280
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ: 418  Multiples: 1
Pack Size: 1
Availability Price Quantity
23280
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 418
Multiples : 1
418 : USD 0.1556
729 : USD 0.0892
736 : USD 0.0883
1656 : USD 0.0393
1672 : USD 0.0389
1689 : USD 0.0385
1825 : USD 0.0356
3000 : USD 0.0246
6000 : USD 0.0224
15000 : USD 0.0201

11062
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 0.2425
10 : USD 0.1463
100 : USD 0.0888
500 : USD 0.0621
1000 : USD 0.0484
3000 : USD 0.0429
6000 : USD 0.0385
9000 : USD 0.0341
24000 : USD 0.0297

22
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 0.266
10 : USD 0.1764
20 : USD 0.1442
100 : USD 0.0882
398 : USD 0.0448

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
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Pd - Power Dissipation
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Maximum Operating Temperature
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Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
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We are delighted to provide the MBT6429DW1T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBT6429DW1T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MBT6429DW1T1G is a N-Channel 100V MOSFET produced by ON Semiconductor. It has a 175A rated drain current and a 0.0048 Ohm typical on resistance. The MOSFET has a Trench-FET technology with an integrated Schottky diode. The maximum power dissipation is 6 Watts, with an operating junction temperature of 150°C. This part is primarily used in high side switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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