MC10EL12DG ON Semiconductor

MC10EL12, MC100EL12 5.0 V ECL Low Impedance Driver Description The MC10EL/100EL12 is a low impedance drive buffer. With two pairs of OR/NOR outputs the device is ideally suited for high drive www.onsemi.com applications such as memory addressing. The device is a function equivalent to the E112 device with higher performance capabilities. With propagation delays significantly faster than the E112, the EL12 is 8 ideally suited for those applications which require the ultimate in 8 1 AC performance. 1 The 100 Series contains temperature compensation. SOIC8 NB TSSOP8 D SUFFIX DT SUFFIX CASE 75107 CASE 948R02 Features 290 ps Propagation Delay Dual Outputs for 25 Drive Applications MARKING DIAGRAMS* ESD Protection: 8 8 > 1 kV Human Body Model HEL12 HL12 > 100 V Machine Model ALYW ALYW PECL Mode Operating Range: V = 4.2 V to 5.7 V with V = 0 V CC EE 1 1 NECL Mode Operating Range: V = 0 V with V = 4.2 V to 5.7 V CC EE Internal Input Pulldown Resistors 8 8 Meets or Exceeds JEDEC Spec EIA/JESD78 IC Latchup Test KEL12 KL12 Moisture Sensitivity: ALYW ALYW Level 1 for SOIC8 NB 1 1 Level 3 for TSSOP8 For Additional Information, see Application Note AND8003/D SOIC8 NB TSSOP8 Flammability Rating: UL 94 V0 0.125 in, H = MC10 Oxygen Index: 28 to 34 K = MC100 Transistor Count = 44 Devices A = Assembly Location L = Wafer Lot These Devices are Pb-Free, Halogen Free and are RoHS Compliant Y = Year W = Work Week = Pb-Free Package (Note: Microdot may be in either location) *For additional marking information, refer to Q 1 8 V a CC Application Note AND8002/D. Q 2 7 D b 0 ORDERING INFORMATION Device Package Shipping Q 3 6 D a 1 MC10EL012DG SOIC8 NB 98 Units/Tube (Pb-Free) MC10EL12DTG TSSOP8 100 Unit/Tube (Pb-Free) Q45 V b EE MC100EL12DG 98 Unit/Tube SOIC8 NB (Pb-Free) MC100EL12DTG TSSOP8 100 Units/Tube Figure 1. Logic Diagram and Pinout Assignment (Pb-Free) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 Rev. 8 MC10EL12/DMC10EL12, MC100EL12 Table 1. PIN DESCRIPTION PIN FUNCTION D0, D1 ECL Data Inputs Qa,Qa Qb, Qb ECL Data Outputs V Positive Supply CC V Negative Supply EE Table 2. MAXIMUM RATINGS Symbol Parameter Condition 1 Condition 2 Rating Unit V PECL Mode Power Supply V = 0 V 8 V CC EE V NECL Mode Power Supply V = 0 V 8 V EE CC V PECL Mode Input Voltage V = 0 V V V 6 V I EE I CC NECL Mode Input Voltage V = 0 V V V 6 CC I EE I Output Current Continuous 50 mA out Surge 100 T Operating Temperature Range 40 to +85 C A T Storage Temperature Range 65 to +150 C stg Thermal Resistance (Junction-to-Ambient) 0 lfpm SOIC8 NB 190 C/W JA 500 lfpm SOIC8 NB 130 Thermal Resistance (Junction-to-Case) Standard Board SOIC8 NB 41 to 44 C/W JC Thermal Resistance (Junction-to-Ambient) 0 lfpm TSSOP8 185 C/W JA 500 lfpm TSSOP8 140 Thermal Resistance (Junction-to-Case) Standard Board TSSOP8 41 to 44 5% C/W JC T Wave Solder (Pb-Free) < 2 to 3 sec 260C 265 C sol Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2