X-On Electronics has gained recognition as a prominent supplier of MCH3007-TL-H Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MCH3007-TL-H Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MCH3007-TL-H ON Semiconductor

MCH3007-TL-H electronic component of ON Semiconductor
MCH3007-TL-H ON Semiconductor
MCH3007-TL-H Bipolar Transistors - BJT
MCH3007-TL-H  Semiconductors

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See Product Specifications
Part No. MCH3007-TL-H
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans RF BJT NPN 12V 0.03A Automotive 3-Pin MCPH
Datasheet: MCH3007-TL-H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3953 ea
Line Total: USD 0.4 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 01 May to Wed. 07 May
MOQ : 6000
Multiples : 3000
6000 : USD 0.151
9000 : USD 0.1372
24000 : USD 0.1338

0
Ship by Thu. 01 May to Wed. 07 May

Multiples : 6000

0
Ship by Tue. 29 Apr to Thu. 01 May
MOQ : 1
Multiples : 1
1 : USD 0.3953
10 : USD 0.3385
100 : USD 0.2561
500 : USD 0.2037
1000 : USD 0.1704
3000 : USD 0.147
9000 : USD 0.138
24000 : USD 0.1358
45000 : USD 0.1325

0
Ship by Thu. 01 May to Wed. 07 May
MOQ : 1776
Multiples : 1
1776 : USD 0.2641

   
Manufacturer
Product Category
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MCH3007-TL-H from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCH3007-TL-H and other electronic components in the Bipolar Transistors - BJT category and beyond.

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LOT No. LOT No. Ordering number : ENA1925A MCH3007 RF Transistor MCH3007 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =5V, I =0A 1.0 A CBO CB E Emitter Cutoff Current I V =1V, I =0A 1.0 A EBO EB C DC Current Gain h V =5V, I =5mA 60 150 FE CE C Gain-Bandwidth Product f V =5V, I =10mA 6 8 GHz T CE C 2 Forward Transfer Gain S21e V =5V, I =10mA, f=1GHz 912 dB CE C Noise Figure NF V =5V, I =10mA, f=1GHz 1.2 1.8 dB CE C Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted. Ordering Information Device Package Shipping memo MCH3007-TL-H MCPH3 3,000pcs./reel Pb Free and Halogen Free I -- V I -- V C CE C BE 30 30 V =5V CE 25 25 20 20 15 15 10 10 5 5 I =0A B 0 0 012 46 8 102 0 0.2 0.4 0.6 0.8 1.0 Collector-to-Emitter Voltage, V -- V IT16310 Base-to-Emitter Voltage, V -- V IT16311 CE BE h -- I Cob -- V FE C CB 1000 10 V =5V f=1MHz CE 7 7 5 5 3 3 2 2 100 1.0 7 7 5 5 3 3 2 2 10 0.1 253 7 253 7 253 7 25373253 7 257 0.1 1.0 10 100 0.1 1.0 10 100 Collector Current, I -- mA IT16312 Collector-to-Base Voltage, V -- V IT16313 C CB Cre -- V f -- I CB T C 100 1.0 f=1MHz V =5V CE 7 f=1GHz 5 7 3 5 2 10 3 7 5 2 3 2 0.1 1.0 25373253 7 257 23 5 7 23 5 7 0.1 1.0 10 100 1.0 10 100 Collector-to-Base Voltage, V -- V IT16314 IT16315 Collector Current, I -- mA CB C No. A1925-2/12 150 A 100 A 50A 350A 300A 250A 200A 400A 450 A 500 A DC Current Gain, h Collector Current, I -- mA Reverse Transfer Capacitance, Cre -- pF FE C Gain-Bandwidth Product, f -- GHz Output Capacitance, Cob -- pF Collector Current, I -- mA T C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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