MJ15003 (NPN), MJ15004 (PNP) Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. MJ15003 (NPN), MJ15004 (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (Note 1) V 140 Vdc CEO(sus) (I = 200 mAdc, I = 0) C B Collector Cutoff Current I CEX (V = 140 Vdc, V = 1.5 Vdc) CE BE(off) 100 Adc (V = 140 Vdc, V = 1.5 Vdc, T = 150C) CE BE(off) C 2 mAdc Collector Cutoff Current I 250 Adc CEO (V = 140 Vdc, I = 0) CE B Emitter Cutoff Current I 100 Adc EBO (V = 5 Vdc, I = 0) EB C SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased I Adc S/b (V = 50 Vdc, t = 1 s (non repetitive)) CE 5.0 (V = 100 Vdc, t = 1 s (non repetitive)) CE 1.0 ON CHARACTERISTICS DC Current Gain h 25 150 FE (I = 5 Adc, V = 2 Vdc) C CE Collector Emitter Saturation Voltage V 1.0 Vdc CE(sat) (I = 5 Adc, I = 0.5 Adc) C B Base Emitter On Voltage V 2.0 Vdc BE(on) (I = 5 Adc, V = 2 Vdc) C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product f 2.0 MHz T (I = 0.5 Adc, V = 10 Vdc, f = 0.5 MHz) C CE test Output Capacitance c 1000 pF ob (V = 10 Vdc, I = 0, f = 1 MHz) CB E test 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. TYPICAL CHARACTERISTICS MJ15003G (NPN) 100 0.8 150C IC/IB = 10 V = 2 V CE 0.7 150C 0.6 25C 25C 0.5 55C 0.4 55C 0.3 0.2 0.1 10 0 0.1 1 10 100 0.1 1 10 100 I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) C C Figure 1. DC Current Gain Figure 2. CollectorEmitter Saturation Voltage