Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications MJD200 (NPN), MJD210 (PNP) www.onsemi.com Designed for low voltage, low power, high gain audio amplifier applications. SILICON POWER TRANSISTORS Features High DC Current Gain 5 AMPERES Lead Formed for Surface Mount Applications in Plastic Sleeves 25 VOLTS, 12.5 WATTS (No Suffix) Low CollectorEmitter Saturation Voltage PNP NPN High CurrentGain Bandwidth Product COLLECTOR COLLECTOR Annular Construction for Low Leakage 2,4 2,4 Epoxy Meets UL 94 V0 0.125 in NJV Prefix for Automotive and Other Applications Requiring 1 1 Unique Site and Control Change Requirements AECQ101 BASE BASE Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant 3 3 EMITTER EMITTER MAXIMUM RATINGS Rating Symbol Max Unit 4 CollectorBase Voltage V 40 Vdc CB 1 2 CollectorEmitter Voltage V 25 Vdc CEO 3 EmitterBase Voltage V 8.0 Vdc EB DPAK Collector Current Continuous I 5.0 Adc C CASE 369C STYLE 1 Collector Current Peak I 10 Adc CM Base Current I 1.0 Adc B MARKING DIAGRAM Total Power Dissipation P D T = 25C 12.5 W C 0.1 W/C Derate above 25C AYWW J2x0G Total Power Dissipation (Note 1) P D 1.4 W T = 25C A 0.011 W/C Derate above 25C A = Assembly Location Operating and Storage Junction T , T 65 to +150 C J stg Y = Year Temperature Range WW = Work Week ESD Human Body Model HBM 3B V x = 1 or 0 G=PbFree Package ESD Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. These ratings are applicable when surface mounted on the minimum pad See detailed ordering and shipping information in the package sizes recommended. dimensions section on page 6 of this data sheet. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 10 C/W JC Thermal Resistance, JunctiontoAmbient (Note 2) R 89.3 C/W JA 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: October, 2019 Rev. 14 MJD200/DMJD200 (NPN), MJD210 (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V Vdc CEO(sus) (I = 10 mAdc, I = 0) 25 C B Collector Cutoff Current I CBO (V = 40 Vdc, I = 0) 100 nAdc CB E (V = 40 Vdc, I = 0, T = 125C) 100 Adc CB E J Emitter Cutoff Current I nAdc EBO (V = 8 Vdc, I = 0) 100 BE C ON CHARACTERISTICS C Current Gain (Note 3), h FE (I = 500 mAdc, V = 1 Vdc) C CE 70 (I = 2 Adc, V = 1 Vdc) C CE 45 180 (I = 5 Adc, V = 2 Vdc) C CE 10 CollectorEmitter Saturation Voltage (Note 3) V Vdc CE(sat) (I = 500 mAdc, I = 50 mAdc) C B 0.3 (I = 2 Adc, I = 200 mAdc) C B 0.75 (I = 5 Adc, I = 1 Adc) C B 1.8 BaseEmitter Saturation Voltage (Note 3) V Vdc BE(sat) (I = 5 Adc, I = 1 Adc) 2.5 C B BaseEmitter On Voltage (Note 3) V Vdc BE(on) (I = 2 Adc, V = 1 Vdc) 1.6 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (Note 4) f MHz T (I = 100 mAdc, V = 10 Vdc, f = 10 MHz) 65 C CE test Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) CB E MJD200 80 MJD210, NJVMJD210T4G 120 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. 4. f = h f . T fe test T T A C 2.5 25 V CC + 30 V 2 20 25 s +11 V R C SCOPE 0 R 1.5 15 B - 9 V D T (SURFACE MOUNT) 51 1 1 10 A t , t 10 ns r f DUTY CYCLE = 1% T C - 4 V 0.5 5 R and R VARIED TO OBTAIN DESIRED CURRENT LEVELS B C D MUST BE FAST RECOVERY TYPE, e.g.: 1 0 0 FOR PNP TEST CIRCUIT, 1N5825 USED ABOVE I 100 mA B 25 50 75 100 125 150 REVERSE ALL POLARITIES MSD6100 USED BELOW I 100 mA B T, TEMPERATURE (C) Figure 1. Power Derating Figure 2. Switching Time Test Circuit www.onsemi.com 2 P , POWER DISSIPATION (WATTS) D