MJD340 (NPN), MJD350 (PNP) High Voltage Power Transistors DPAK for Surface Mount Applications www.onsemi.com Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. SILICON Features POWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) 0.5 AMPERE Electrically Similar to Popular MJE340 and MJE350 300 VOLTS, 15 WATTS Epoxy Meets UL 94 V0 0.125 in NJV Prefix for Automotive and Other Applications Requiring COLLECTOR COLLECTOR Unique Site and Control Change Requirements AECQ101 2, 4 2, 4 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 1 Compliant BASE BASE MAXIMUM RATINGS 3 3 Rating Symbol Max Unit EMITTER EMITTER CollectorEmitter Voltage V 300 Vdc CEO 4 CollectorBase Voltage V 300 Vdc CB EmitterBase Voltage V 3 Vdc EB 2 1 Collector Current Continuous I 0.5 Adc C 3 Collector Current Peak I 0.75 Adc CM DPAK CASE 369C Total Power Dissipation P D STYLE 1 T = 25C 15 W C Derate above 25C 0.12 W/C MARKING DIAGRAM Total Power Dissipation (Note 1) P D T = 25C 1.56 W A Derate above 25C 0.012 W/C AYWW Operating and Storage Junction T , T 65 to +150 C J stg Temperature Range J3x0G ESD Human Body Model HBM V MJD340 (NPN) 3B MJD350 (PNP) 2 A = Assembly Location ESD Machine Model MM V Y = Year MJD340 (NPN) M4 WW = Work Week MJD350 (PNP) M4 J3x0 = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the x= 4 or 5 device. If any of these limits are exceeded, device functionality should not be G = PbFree Package assumed, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2016 Rev. 12 MJD340/DMJD340 (NPN), MJD350 (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 8.33 C/W JC Thermal Resistance, JunctiontoAmbient (Note 2) R 80 C/W JA Leading Temperature for Soldering Purpose T 260 C L 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V V CEO(sus) (I = 1 mA, I = 0) 300 C B Collector Cutoff Current I mA CEO (V = 300 V, I = 0) 0.1 CB E Emitter Cutoff Current I mA EBO (V = 3 V, I = 0) 0.1 BE C ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 50 mA, V = 10 V) 30 240 C CE CollectorEmitter Saturation Voltage V V CE(sat) (I = 100 mA, I = 10 mA) 1 C B BaseEmitter On Voltage V V BE(on) (I = 1 A, V = 10 V) 1.5 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 50 mA, V = 10 V, f = 10 MHz) 10 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. www.onsemi.com 2