MJD44H11(NPN),
MJD45H11(PNP)
Complementary Power
Transistors
DPAK for Surface Mount Applications
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Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
SILICON
and power amplifiers.
POWER TRANSISTORS
Features
8 AMPERES
Lead Formed for Surface Mount Application in Plastic Sleeves
80 VOLTS, 20 WATTS
(No Suffix)
Straight Lead Version in Plastic Sleeves (1 Suffix)
COMPLEMENTARY
Electrically Similar to Popular D44H/D45H Series
COLLECTOR COLLECTOR
Low Collector Emitter Saturation Voltage
2, 4 2, 4
Fast Switching Speeds
Complementary Pairs Simplifies Designs
1 1
Epoxy Meets UL 94 V0 @ 0.125 in
BASE BASE
NJV Prefix for Automotive and Other Applications Requiring
3 3
Unique Site and Control Change Requirements; AECQ101
EMITTER EMITTER
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
4
Compliant
4 4
MAXIMUM RATINGS (T = 25C, common for NPN and PNP, minus
A
1
sign, , for PNP omitted, unless otherwise noted)
2
1 1
2
2
3
Rating Symbol Max Unit 3 3
CollectorEmitter Voltage V 80 Vdc
CEO DPAK DPAK IPAK
CASE 369C CASE 369G CASE 369D
EmitterBase Voltage V 5 Vdc
EB
STYLE 1 STYLE 1 STYLE 1
Collector Current Continuous I 8 Adc
C
Collector Current Peak I 16 Adc
CM
MARKING DIAGRAMS
Total Power Dissipation P
D
@ T = 25C 20 W
C
Derate above 25C 0.16 W/C
AYWW
AYWW
Total Power Dissipation (Note 1) P
J4 J4
D
1.75 W
@ T = 25C
xH11G xH11G
A
0.014 W/C
Derate above 25C
Operating and Storage Junction T , T 55 to +150 C
J stg DPAK IPAK
Temperature Range
A = Assembly Location
ESD Human Body Model HBM 3B V
Y = Year
WW = Work Week
ESD Machine Model MM C V
J4xH11 = Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
x = 4 or 5
device. If any of these limits are exceeded, device functionality should not be
G = PbFree Package
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Semiconductor Components Industries, LLC, 2016
1 Publication Order Number:
September, 2016 Rev. 20 MJD44H11/DMJD44H11 (NPN), MJD45H11 (PNP)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase R 6.25 C/W
JC
Thermal Resistance, JunctiontoAmbient (Note 2) R 71.4 C/W
JA
Lead Temperature for Soldering T 260 C
L
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS
(T = 25C, common for NPN and PNP, minus sign, , for PNP omitted, unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage V Vdc
CEO(sus)
(I = 30 mA, I = 0) 80
C B
Collector Cutoff Current I A
CES
(V = Rated V , V = 0) 1.0
CE CEO BE
Emitter Cutoff Current I
A
EBO
(V = 5 Vdc) 1.0
EB
ON CHARACTERISTICS
CollectorEmitter Saturation Voltage V Vdc
CE(sat)
(I = 8 Adc, I = 0.4 Adc) 1
C B
BaseEmitter Saturation Voltage V Vdc
BE(sat)
(I = 8 Adc, I = 0.8 Adc) 1.5
C B
DC Current Gain h
FE
(V = 1 Vdc, I = 2 Adc) 60
CE C
(V = 1 Vdc, I = 4 Adc) 40
CE C
DYNAMIC CHARACTERISTICS
Collector Capacitance C pF
cb
(V = 10 Vdc, f = 1 Mhz)
CB test
MJD44H11 45
MJD45H11 130
Gain Bandwidth Product f MHz
T
(I = 0.5 Adc, V = 10 Vdc, f = 20 Mhz)
C CE
MJD44H11 85
MJD45H11 90
SWITCHING TIMES
Delay and Rise Times t + t ns
d r
(I = 5 Adc, I = 0.5 Adc)
C B1
MJD44H11 300
MJD45H11 135
Storage Time t ns
s
(I = 5 Adc, I = I = 0.5 Adc)
C B1 B2
MJD44H11 500
MJD45H11 500
Fall Time t ns
f
(I = 5 Adc, I = I = 0.5 Adc)
C B1 B2
MJD44H11 140
MJD45H11 100
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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