DATA SHEET www.onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 8 AMPERES DPAK for Surface Mount Applications 80 VOLTS, 20 WATTS MJD44H11 (NPN), COMPLEMENTARY COLLECTOR COLLECTOR MJD45H11 (PNP) 2, 4 2, 4 Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, 1 1 and power amplifiers. BASE BASE Features 3 3 Lead Formed for Surface Mount Application in Plastic Sleeves EMITTER EMITTER (No Suffix) Straight Lead Version in Plastic Sleeves (1 Suffix) 4 Electrically Similar to Popular D44H/D45H Series Low Collector Emitter Saturation Voltage 4 4 Fast Switching Speeds 1 Complementary Pairs Simplifies Designs 2 1 1 2 2 3 3 3 Epoxy Meets UL 94 V0 0.125 in DPAK DPAK IPAK NJV Prefix for Automotive and Other Applications Requiring CASE 369C CASE 369G CASE 369D Unique Site and Control Change Requirements AECQ101 STYLE 1 STYLE 1 STYLE 1 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS MARKING DIAGRAMS Compliant AYWW AYWW MAXIMUM RATINGS (T = 25 C, common for NPN and PNP, minus A J4 J4 sign, , for PNP omitted, unless otherwise noted) xH11G xH11G Rating Symbol Max Unit CollectorEmitter Voltage V 80 Vdc DPAK IPAK CEO A = Assembly Location EmitterBase Voltage V 5 Vdc EB Y = Year Collector Current Continuous I 8 Adc C WW = Work Week Collector Current Peak I 16 Adc CM J4xH11 = Device Code Total Power Dissipation P x = 4 or 5 D T = 25C 20 W C G=PbFree Package Derate above 25C 0.16 W/C Total Power Dissipation (Note 1) P D 1.75 W T = 25C A ORDERING INFORMATION 0.014 W/C Derate above 25C See detailed ordering and shipping information in the package Operating and Storage Junction T , T 55 to +150 C dimensions section on page 7 of this data sheet. J stg Temperature Range ESD Human Body Model HBM 3B V ESD Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2021 Rev. 21 MJD44H11/DMJD44H11 (NPN), MJD45H11 (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 6.25 C/W JC Thermal Resistance, JunctiontoAmbient (Note 2) R 71.4 C/W JA Lead Temperature for Soldering T 260 C L 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (T = 25 C, common for NPN and PNP, minus sign, , for PNP omitted, unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 30 mA, I = 0) 80 C B Collector Cutoff Current I A CES (V = Rated V , V = 0) 1.0 CE CEO BE Emitter Cutoff Current I A EBO (V = 5 Vdc) 1.0 EB ON CHARACTERISTICS CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 8 Adc, I = 0.4 Adc) 1 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 8 Adc, I = 0.8 Adc) 1.5 C B DC Current Gain h FE (V = 1 Vdc, I = 2 Adc) 60 CE C (V = 1 Vdc, I = 4 Adc) 40 CE C DYNAMIC CHARACTERISTICS Collector Capacitance C pF cb (V = 10 Vdc, f = 1 Mhz) CB test MJD44H11 45 MJD45H11 130 Gain Bandwidth Product f MHz T (I = 0.5 Adc, V = 10 Vdc, f = 20 Mhz) C CE MJD44H11 85 MJD45H11 90 SWITCHING TIMES Delay and Rise Times t + t ns d r (I = 5 Adc, I = 0.5 Adc) C B1 MJD44H11 300 MJD45H11 135 Storage Time t ns s (I = 5 Adc, I = I = 0.5 Adc) C B1 B2 MJD44H11 500 MJD45H11 500 Fall Time t ns f (I = 5 Adc, I = I = 0.5 Adc) C B1 B2 MJD44H11 140 MJD45H11 100 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2