X-On Electronics has gained recognition as a prominent supplier of MJD44H11RLG Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJD44H11RLG Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJD44H11RLG ON Semiconductor

MJD44H11RLG electronic component of ON Semiconductor
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See Product Specifications
Part No.MJD44H11RLG
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 8A 80V 20W NPN
Datasheet: MJD44H11RLG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.285 ea
Line Total: USD 1.28 
Availability - 1746
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1746
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 1.285
10 : USD 0.9937
25 : USD 0.9872
100 : USD 0.7676
250 : USD 0.761
500 : USD 0.6284
1000 : USD 0.5711

1649
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 1.232
10 : USD 1.106
21 : USD 0.84
57 : USD 0.798
1800 : USD 0.77

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Length
Cnhts
Hts Code
Mxhts
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We are delighted to provide the MJD44H11RLG from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJD44H11RLG and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DATA SHEET www.onsemi.com Complementary Power SILICON POWER TRANSISTORS Transistors 8 AMPERES DPAK for Surface Mount Applications 80 VOLTS, 20 WATTS MJD44H11 (NPN), COMPLEMENTARY COLLECTOR COLLECTOR MJD45H11 (PNP) 2, 4 2, 4 Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, 1 1 and power amplifiers. BASE BASE Features 3 3 Lead Formed for Surface Mount Application in Plastic Sleeves EMITTER EMITTER (No Suffix) Straight Lead Version in Plastic Sleeves (1 Suffix) 4 Electrically Similar to Popular D44H/D45H Series Low Collector Emitter Saturation Voltage 4 4 Fast Switching Speeds 1 Complementary Pairs Simplifies Designs 2 1 1 2 2 3 3 3 Epoxy Meets UL 94 V0 0.125 in DPAK DPAK IPAK NJV Prefix for Automotive and Other Applications Requiring CASE 369C CASE 369G CASE 369D Unique Site and Control Change Requirements AECQ101 STYLE 1 STYLE 1 STYLE 1 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS MARKING DIAGRAMS Compliant AYWW AYWW MAXIMUM RATINGS (T = 25 C, common for NPN and PNP, minus A J4 J4 sign, , for PNP omitted, unless otherwise noted) xH11G xH11G Rating Symbol Max Unit CollectorEmitter Voltage V 80 Vdc DPAK IPAK CEO A = Assembly Location EmitterBase Voltage V 5 Vdc EB Y = Year Collector Current Continuous I 8 Adc C WW = Work Week Collector Current Peak I 16 Adc CM J4xH11 = Device Code Total Power Dissipation P x = 4 or 5 D T = 25C 20 W C G=PbFree Package Derate above 25C 0.16 W/C Total Power Dissipation (Note 1) P D 1.75 W T = 25C A ORDERING INFORMATION 0.014 W/C Derate above 25C See detailed ordering and shipping information in the package Operating and Storage Junction T , T 55 to +150 C dimensions section on page 7 of this data sheet. J stg Temperature Range ESD Human Body Model HBM 3B V ESD Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2021 Rev. 21 MJD44H11/DMJD44H11 (NPN), MJD45H11 (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 6.25 C/W JC Thermal Resistance, JunctiontoAmbient (Note 2) R 71.4 C/W JA Lead Temperature for Soldering T 260 C L 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (T = 25 C, common for NPN and PNP, minus sign, , for PNP omitted, unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 30 mA, I = 0) 80 C B Collector Cutoff Current I A CES (V = Rated V , V = 0) 1.0 CE CEO BE Emitter Cutoff Current I A EBO (V = 5 Vdc) 1.0 EB ON CHARACTERISTICS CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 8 Adc, I = 0.4 Adc) 1 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 8 Adc, I = 0.8 Adc) 1.5 C B DC Current Gain h FE (V = 1 Vdc, I = 2 Adc) 60 CE C (V = 1 Vdc, I = 4 Adc) 40 CE C DYNAMIC CHARACTERISTICS Collector Capacitance C pF cb (V = 10 Vdc, f = 1 Mhz) CB test MJD44H11 45 MJD45H11 130 Gain Bandwidth Product f MHz T (I = 0.5 Adc, V = 10 Vdc, f = 20 Mhz) C CE MJD44H11 85 MJD45H11 90 SWITCHING TIMES Delay and Rise Times t + t ns d r (I = 5 Adc, I = 0.5 Adc) C B1 MJD44H11 300 MJD45H11 135 Storage Time t ns s (I = 5 Adc, I = I = 0.5 Adc) C B1 B2 MJD44H11 500 MJD45H11 500 Fall Time t ns f (I = 5 Adc, I = I = 0.5 Adc) C B1 B2 MJD44H11 140 MJD45H11 100 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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