X-On Electronics has gained recognition as a prominent supplier of MJD44H11T4G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJD44H11T4G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJD44H11T4G ON Semiconductor

MJD44H11T4G electronic component of ON Semiconductor
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See Product Specifications
Part No.MJD44H11T4G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 8A 80V 20W NPN
Datasheet: MJD44H11T4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.2926 ea
Line Total: USD 731.5 
Availability - 46075
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
46075
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.2926
5000 : USD 0.2805
7500 : USD 0.2762
10000 : USD 0.2722
25000 : USD 0.2681
50000 : USD 0.264

1336
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9515
10 : USD 0.7045
25 : USD 0.6977
100 : USD 0.5057
250 : USD 0.5006
500 : USD 0.4101
1000 : USD 0.344

276450
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.3406
5000 : USD 0.3104
10000 : USD 0.3065
25000 : USD 0.2977

121231
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 317
Multiples : 1
317 : USD 0.3944

37490
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5878
10 : USD 0.501
30 : USD 0.4385
100 : USD 0.386
500 : USD 0.3698
1000 : USD 0.3596

1449
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 0.686
10 : USD 0.574
25 : USD 0.5166
41 : USD 0.4242
113 : USD 0.4018

46075
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.3956
5000 : USD 0.3792
7500 : USD 0.3735
10000 : USD 0.3679
25000 : USD 0.3626

1336
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 25
Multiples : 1
25 : USD 0.6977
100 : USD 0.5057
250 : USD 0.5006
500 : USD 0.4101
1000 : USD 0.344

276450
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.3406
5000 : USD 0.3104
10000 : USD 0.3065
25000 : USD 0.2977

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJD44H11T4G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJD44H11T4G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MJD44H11T4G is an NPN (Negative-Positive-Negative) bipolar transistor manufactured by ON Semiconductor. It is an 8 Amp device with a maximum voltage rating of 80VDC and a power dissipation of 20 Watts. It is composed of two N-type emitter and collector regions separated by a thin layer of P-type base material. This device has a wide variety of applications such as amplifier circuits, switching applications, and can be used along with other components to create various electronic systems. It's used in television sets, computers, cell phones, and automotive applications. This part is designed to be used with high voltage and current loads as well as in audio applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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