X-On Electronics has gained recognition as a prominent supplier of MJD44H11T4G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJD44H11T4G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJD44H11T4G ON Semiconductor

MJD44H11T4G electronic component of ON Semiconductor
MJD44H11T4G ON Semiconductor
MJD44H11T4G Bipolar Transistors - BJT
MJD44H11T4G  Semiconductors

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See Product Specifications
Part No. MJD44H11T4G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 8A 80V 20W NPN
Datasheet: MJD44H11T4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.3018 ea
Line Total: USD 754.5 
Availability - 257050
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
43650
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 2500
Multiples : 2500
2500 : USD 0.3236
5000 : USD 0.307
7500 : USD 0.3025
10000 : USD 0.2979
25000 : USD 0.2935
50000 : USD 0.289

366
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 111
Multiples : 1
111 : USD 0.583
146 : USD 0.4459
147 : USD 0.4415
155 : USD 0.4202
250 : USD 0.3141

257050
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 2500
Multiples : 2500
2500 : USD 0.3018
10000 : USD 0.2874

17218
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 1
Multiples : 1
1 : USD 0.7471
10 : USD 0.6242
30 : USD 0.5374
100 : USD 0.3609
500 : USD 0.3422
1000 : USD 0.331

1726
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 1.022
10 : USD 0.7126
45 : USD 0.3906
123 : USD 0.3696
1000 : USD 0.3612

43650
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 2500
Multiples : 2500
2500 : USD 0.3808
5000 : USD 0.3611
7500 : USD 0.3559
10000 : USD 0.3505
25000 : USD 0.3453

327375
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 2500
Multiples : 2500
2500 : USD 0.3146
10000 : USD 0.2996

366
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 147
Multiples : 1
147 : USD 0.4415
155 : USD 0.4202
250 : USD 0.3141

264325
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 2500
Multiples : 2500
2500 : USD 0.3018
10000 : USD 0.2874

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
LoadingGif
 
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We are delighted to provide the MJD44H11T4G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJD44H11T4G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MJD44H11T4G is an NPN (Negative-Positive-Negative) bipolar transistor manufactured by ON Semiconductor. It is an 8 Amp device with a maximum voltage rating of 80VDC and a power dissipation of 20 Watts. It is composed of two N-type emitter and collector regions separated by a thin layer of P-type base material. This device has a wide variety of applications such as amplifier circuits, switching applications, and can be used along with other components to create various electronic systems. It's used in television sets, computers, cell phones, and automotive applications. This part is designed to be used with high voltage and current loads as well as in audio applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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