MJE13009G SWITCHMODE Series NPN Silicon Power Transistors The MJE13009G is designed for highvoltage, highspeed power switching inductive circuits where fall time is critical. They are MJE13009G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (Note 2) CollectorEmitter Sustaining Voltage V 400 Vdc CEO(sus) (I = 10 mA, I = 0) C B Collector Cutoff Current I mAdc CEV (V = Rated Value, V = 1.5 Vdc) CEV BE(off) 1 (V = Rated Value, V = 1.5 Vdc, T = 100 C) CEV BE(off) C 5 Emitter Cutoff Current I 1 mAdc EBO (V = 9 Vdc, I = 0) EB C SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased I See Figure 1 S/b Clamped Inductive SOA with Base Reverse Biased See Figure 2 ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 5 Adc, V = 5 Vdc) C CE 8 40 (I = 8 Adc, V = 5 Vdc) C CE 6 30 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 5 Adc, I = 1 Adc) C B 1 (I = 8 Adc, I = 1.6 Adc) C B 1.5 (I = 12 Adc, I = 3 Adc) C B 3 (I = 8 Adc, I = 1.6 Adc, T = 100 C) C B C 2 BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 5 Adc, I = 1 Adc) C B 1.2 (I = 8 Adc, I = 1.6 Adc) C B 1.6 (I = 8 Adc, I = 1.6 Adc, T = 100 C) C B C 1.5 DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f 4 MHz T (I = 500 mAdc, V = 10 Vdc, f = 1 MHz) C CE Output Capacitance C 180 pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) CB E SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time t 0.06 0.1 s d (V = 125 Vdc, I = 8 A, CC C Rise Time t 0.45 1 s r I = I = 1.6 A, t = 25 s, B1 B2 p Storage Time t 1.3 3 s s Duty Cycle 1%) Fall Time t 0.2 0.7 s f Inductive Load, Clamped (Table 1, Figure 13) Voltage Storage Time t 0.92 2.3 s sv (I = 8 A, V = 300 Vdc, C clamp I = 1.6 A, V = 5 Vdc, T = 100 C) Crossover Time B1 BE(off) C t 0.12 0.7 s c 2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.