MJE15028, MJE15030 (NPN),
MJE15029, MJE15031 (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use as highfrequency drivers in
audio amplifiers. MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
C
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 1) V Vdc
CEO(sus)
(I = 10 mAdc, I = 0)
C B
MJE15028, MJE15029 120
MJE15030, MJE15031 150
Collector Cutoff Current I mAdc
CEO
(V = 120 Vdc, I = 0)
CE B
MJE15028, MJE15029 0.1
(V = 150 Vdc, I = 0)
CE B
MJE15030, MJE15031 0.1
Collector Cutoff Current I Adc
CBO
(V = 120 Vdc, I = 0)
CB E
MJE15028, MJE15029 10
(V = 150 Vdc, I = 0)
CB E
MJE15030, MJE15031 10
Emitter Cutoff Current I Adc
EBO
(V = 5.0 Vdc, I = 0) 10
BE C
ON CHARACTERISTICS (Note 1)
DC Current Gain h
FE
(I = 0.1 Adc, V = 2.0 Vdc)
C CE 40
(I = 2.0 Adc, V = 2.0 Vdc)
C CE 40
(I = 3.0 Adc, V = 2.0 Vdc)
C CE
40
(I = 4.0 Adc, V = 2.0 Vdc)
C CE
20
DC Current Gain Linearity h Typ
FE
(V From 2.0 V to 20 V, I From 0.1 A to 3 A) 2
CE C
(NPN to PNP) 3
CollectorEmitter Saturation Voltage V Vdc
CE(sat)
(I = 1.0 Adc, I = 0.1 Adc) 0.5
C B
BaseEmitter On Voltage V Vdc
BE(on)
(I = 1.0 Adc, V = 2.0 Vdc) 1.0
C CE
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (Note 2) f MHz
T
(I = 500 mAdc, V = 10 Vdc, f = 10 MHz) 30
C CE test
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2. f = h f .
T fe test
T T
A C
3.0 60
2.0 40
T
C
T
1.0 20
A
0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (C)
Figure 1. Power Derating