MJE15034 (NPN), MJE15035 (PNP) Complementary Silicon Plastic Power Transistors TO220, NPN & PNP Devices www.onsemi.com Complementary silicon plastic power transistors are designed for 4.0 AMPERES use as highfrequency drivers in audio amplifiers. POWER TRANSISTORS Features COMPLEMENTARY SILICON High Current Gain Bandwidth Product 350 VOLTS, 50 WATTS TO220 Compact Package Epoxy meets UL 94 V0 0.125 in COMPLEMENTARY These Devices are PbFree and are RoHS Compliant* COLLECTOR COLLECTOR 2, 4 2, 4 MAXIMUM RATINGS Rating Symbol Value Unit 1 1 CollectorEmitter Voltage V 350 Vdc CEO BASE BASE CollectorBase Voltage V 350 Vdc CB EmitterBase Voltage V 5.0 Vdc 3 3 EB EMITTER EMITTER Collector Current Continuous I 4.0 Adc C Collector Current Peak I 8.0 Adc CM MARKING Base Current I 1.0 Adc DIAGRAM B 4 Total Power Dissipation P D T = 25 C 50 W C Derate above 25 C 0.40 W/ C Total Power Dissipation P 2.0 W D T = 25 C 0.016 W/ C A TO220 MJE1503xG Derate above 25 C CASE 221A AYWW STYLE 1 Operating and Storage Junction T , T 65 to +150 C J stg Temperature Range 1 ESD Human Body Model HBM 3B V 2 3 ESD Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the MJE1503x = Device Code device. If any of these limits are exceeded, device functionality should not be x = 4 or 5 assumed, damage may occur and reliability may be affected. A = Location Code Y = Year THERMAL CHARACTERISTICS WW = Work Week G = PbFree Package Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 2.5 C/W JC ORDERING INFORMATION Thermal Resistance, JunctiontoAmbient R 62.5 C/W JA Device Package Shipping MJE15034G TO220 50 Units / Rail (PbFree) MJE15035G TO220 50 Units / Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 6 MJE15034/DMJE15034 (NPN), MJE15035 (PNP) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) (I = 10 mAdc, I = 0) V 350 Vdc C B CEO(sus) Collector Cutoff Current (V = 350 Vdc, I = 0) I 10 Adc CB E CBO Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 10 Adc BE C EBO ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 0.1 Adc, V = 5.0 Vdc) 100 C CE (I = 0.5 Adc, V = 5.0 Vdc) C CE 100 (I = 1.0 Adc, V = 5.0 Vdc) C CE 50 (I = 2.0 Adc, V = 5.0 Vdc) C CE 10 CollectorEmitter Saturation Voltage (I = 1.0 Adc, I = 0.1 Adc) V 0.5 Vdc C B CE(sat) BaseEmitter On Voltage (I = 1.0 Adc, V = 5.0 Vdc) V 1.0 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (Note 2) f MHz T (I = 500 mAdc, V = 10 Vdc, f = 1.0 MHz) 30 C CE test Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. f = h f . T fe test 10 T T A C 100mS 3.0 60 DC 1.0 2.0 40 T C 0.1 T 1.0 20 A 0 0 0.01 0 20 40 60 80 100 120 140 160 1.0 10 100 1000 T, TEMPERATURE (C) V , COLLECTOREMITTER VOLTAGE (V) CE Figure 1. Power Derating Figure 2. Active Region Safe Operating Area 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 P (pk) Z = r(t) R JC(t) JC 0.05 0.07 R = 2.5C/W MAX JC 0.05 D CURVES APPLY FOR POWER 0.02 PULSE TRAIN SHOWN t 1 0.03 READ TIME AT t 1 t 2 0.02 0.01 T - T = P Z J(pk) C (pk) JC(t) DUTY CYCLE, D = t /t 1 2 SINGLE PULSE 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k t, TIME (ms) Figure 3. Thermal Response www.onsemi.com 2 P , POWER DISSIPATION (WATTS) D r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) I , COLLECTOR CURRENT (AMPS) C