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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.MJE180/181/182 MJE180/181/182 Low Power Audio Amplifier Low Current High Speed Switching Applications TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : MJE180 60 V CBO : MJE181 80 V : MJE182 100 V V Collector-Emitter Voltage : MJE180 40 V CEO : MJE181 60 V : MJE182 80 V V Emitter-Base Voltage 7 V EBO I Collector Current (DC) 3 A C I Collector Current (Pulse) 6 A CP I Base Current 1 A B P Collector Dissipation (T =25C) 1.5 W C a P Collector Dissipation (T =25C) 12.5 W C C T Junction Temperature 150 C J T Storage Temperature - 65 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units BV Collector -Emitter Breakdown Voltage CEO : MJE180 I = 10mA, I = 0 40 V C B : MJE181 60 V : MJE182 80 V I Collector Cut-off Current : MJE180 V = 60V, I = 0 0.1 A CBO CB B : MJE181 V = 80V, I = 0 0.1 A CB E : MJE182 V = 100V, I = 0 0.1 A CB E : MJE180 V = 60V, I = 0 T = 150C 0.1 mA CB E C : MJE181 V = 80V, I = 0 T = 150C 0.1 mA CB E C : MJE182 V = 100V, I = 0 T = 150C 0.1 mA CB E C I Emitter Cut-off Current V = 7V, I = 0 0.1 A EBO BE C h DC Current Gain V = 1V, I = 100mA 50 250 FE CE C V = 1V, I = 500mA 30 CE C V = 1V, I = 1.5A 12 CE C V (sat) Collector-Emitter Saturation Voltage I = 500mA, I = 50mA 0.3 V CE C B I = 1.5A, I = 150mA 0.9 V C B I = 3A, I = 600mA 1.7 V C B V (sat) Base-Emitter Saturation Voltage I = 1.5A, I = 150mA 1.5 V BE C B I = 3A, I = 600mA 2.0 V C B V (on) Base-Emitter ON Voltage V = 1V, I = 500mA 1.2 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 100mA 50 MHz T CE C C Output Capacitance V = 10V, I = 0, f = 0.1MHz 30 pF ob CB E 2001 Fairchild Semiconductor Corporation Rev. A1, February 2001