MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 10 C/W JC Thermal Resistance, JunctiontoAmbient R 83.4 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 10 mAdc, I = 0) C B MJE170G, MJE180G 40 MJE171G, MJE181G 60 MJE172G, MJE182G 80 Collector Cutoff Current I CBO (V = 60 Vdc, I = 0) CB E MJE170G, MJE180G 0.1 Adc (V = 80 Vdc, I = 0) CB E MJE171G, MJE181G 0.1 (V = 100 Vdc, I = 0) CB E MJE172G, MJE182G 0.1 mAdc (V = 60 Vdc, I = 0, T = 150C) CB E C MJE170G, MJE180G (V = 80 Vdc, I = 0, T = 150C) CB E C MJE171G, MJE181G 0.1 (V = 100 Vdc, I = 0, T = 150C) CB E C MJE172G, MJE182G 0.1 Emitter Cutoff Current I Adc EBO (V = 7.0 Vdc, I = 0) 0.1 BE C ON CHARACTERISTICS DC Current Gain h FE (I = 100 mAdc, V = 1.0 Vdc) 50 250 C CE (I = 500 mAdc, V = 1.0 Vdc) 30 C CE (I = 1.5 Adc, V = 1.0 Vdc) 12 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 500 mAdc, I = 50 mAdc) 0.3 C B (I = 1.5 Adc, I = 150 mAdc) 0.9 C B (I = 3.0 Adc, I = 600 mAdc) 1.7 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 1.5 Adc, I = 150 mAdc) 1.5 C B (I = 3.0 Adc, I = 600 mAdc) 2.0 C B BaseEmitter On Voltage V Vdc BE(on) (I = 500 mAdc, V = 1.0 Vdc) 1.2 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (Note 1) f 50 MHz T (I = 100 mAdc, V = 10 Vdc, f = 10 MHz) C CE test Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) CB E MJE171G/MJE172G 60 MJE181G/MJE182G 40 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. f = h f . T fe test