X-On Electronics has gained recognition as a prominent supplier of MJE2955TG Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJE2955TG Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJE2955TG ON Semiconductor

Name: MJE2955TG
Brand: ON Semiconductor
SKU: MJE2955TG_ON Semiconductor
Availability: InStock
Rating: 5 (11 reviews)

MJE2955TG electronic component of ON Semiconductor

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See Product Specifications

Part No.	MJE2955TG
Manufacturer:	ON Semiconductor
Category:	Bipolar Transistors - BJT
Description:	Transistors Bipolar - BJT 10A 60V 125W PNP
Datasheet:	MJE2955TG Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

108: USD 0.6013 ea
Line Total: USD 64.94

Availability - 730
Ship by Thu. 30 Jan to Wed. 05 Feb

MOQ: 108 Multiples: 50
Pack Size: 50

MJE2955TG More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

1250

Ship by Thu. 30 Jan to Wed. 05 Feb

MOQ : 62
Multiples : 1

62 : USD 1.0402
83 : USD 0.7871
100 : USD 0.7097
500 : USD 0.6001
1000 : USD 0.5279
2900 : USD 0.4965

730

Ship by Thu. 30 Jan to Wed. 05 Feb

MOQ : 108
Multiples : 50

108 : USD 0.6013
114 : USD 0.5686
500 : USD 0.5166
1000 : USD 0.4731
2900 : USD 0.4579

727

Ship by Thu. 30 Jan to Wed. 05 Feb

MOQ : 108
Multiples : 50

108 : USD 0.6013
114 : USD 0.5686
500 : USD 0.5166
1000 : USD 0.4731

1250

Ship by Thu. 30 Jan to Wed. 05 Feb

MOQ : 83
Multiples : 1

83 : USD 0.7871
100 : USD 0.7097
500 : USD 0.6001
1000 : USD 0.5279

2813

Ship by Thu. 30 Jan to Wed. 05 Feb

MOQ : 150
Multiples : 50

150 : USD 0.7896
500 : USD 0.7246
1000 : USD 0.6863
2500 : USD 0.6522
5000 : USD 0.6424

Specifications

Manufacturer

ON Semiconductor ON Semiconductor

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

RoHS - XON

Y Y

Mounting Style

Through Hole Through Hole

Package / Case

TO - 220 - 3 TO - 220 - 3

Transistor Polarity

Pnp Pnp

Configuration

Single Single

Maximum DC Collector Current

10 A 10 A

Collector- Emitter Voltage VCEO Max

60 V 60 V

Collector- Base Voltage VCBO

70 V 70 V

Emitter- Base Voltage VEBO

5 V 5 V

Collector-Emitter Saturation Voltage

1.1 V 1.1 V

Gain Bandwidth Product fT

2 Mhz 2 Mhz

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Series

Mje2955t Mje2955t

Packaging

Tube Tube

Brand

On Semiconductor On Semiconductor

Continuous Collector Current

10 A 10 A

Dc Collector/Base Gain Hfe Min

20 20

Maximum Power Dissipation

75 W 75 W

Factory Pack Quantity :

50 50

Notes:- Show Stocked Products With Similar Attributes.

MJE2955TG Alternative Parts

We are delighted to provide the MJE2955TG from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJE2955TG and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The MJE2955TG is a 10A, 60V, 125W PNP Bipolar Junction Transistor (BJT) designed and manufactured by ON Semiconductor. It has a collector current rating of 10 amperes and a voltage rating of 60 volts for the collector-emitter junction. This transistor is designed for use in high-power switching applications, such as in power converter designs and motor control applications. It also provides very accurate current sensing capabilities due to its built-in integrated inner sense resistor. This transistor operates at a maximum operating temperature of 150°C and it is housed in a TO-220F package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
1250 Ship by Thu. 30 Jan to Wed. 05 Feb MOQ : 62 Multiples : 1	62 : USD 1.0402 83 : USD 0.7871 100 : USD 0.7097 500 : USD 0.6001 1000 : USD 0.5279 2900 : USD 0.4965

730 Ship by Thu. 30 Jan to Wed. 05 Feb MOQ : 108 Multiples : 50	108 : USD 0.6013 114 : USD 0.5686 500 : USD 0.5166 1000 : USD 0.4731 2900 : USD 0.4579

727 Ship by Thu. 30 Jan to Wed. 05 Feb MOQ : 108 Multiples : 50	108 : USD 0.6013 114 : USD 0.5686 500 : USD 0.5166 1000 : USD 0.4731

1250 Ship by Thu. 30 Jan to Wed. 05 Feb MOQ : 83 Multiples : 1	83 : USD 0.7871 100 : USD 0.7097 500 : USD 0.6001 1000 : USD 0.5279

2813 Ship by Thu. 30 Jan to Wed. 05 Feb MOQ : 150 Multiples : 50	150 : USD 0.7896 500 : USD 0.7246 1000 : USD 0.6863 2500 : USD 0.6522 5000 : USD 0.6424

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