MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in generalpurpose amplifier and switching applications. www.onsemi.com Features 10 AMPERE High Current Gain Bandwidth Product COMPLEMENTARY SILICON These Devices are PbFree and are RoHS Compliant* POWER TRANSISTORS 60 VOLTS 75 WATTS MAXIMUM RATINGS Rating Symbol Value Unit PNP NPN CollectorEmitter Voltage V 60 Vdc CEO COLLECTOR 2, 4 COLLECTOR 2, 4 CollectorBase Voltage V 70 Vdc CB EmitterBase Voltage V 5.0 Vdc EB 1 1 Collector Current I 10 Adc C BASE BASE Base Current I 6.0 Adc B EMITTER 3 EMITTER 3 Total Device Dissipation P D T = 25C (Note 1) 75 W C Derate above 25C 0.6 W/C 4 Operating and Storage Junction T , T 55 to +150 C J stg Temperature Range TO220 Stresses exceeding those listed in the Maximum Ratings table may damage the CASE 221A09 device. If any of these limits are exceeded, device functionality should not be STYLE 1 assumed, damage may occur and reliability may be affected. 1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and 1 must be observed. 2 3 THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristics Symbol Max Unit Thermal Resistance, JunctiontoCase R 1.67 C/W JC MJExx55T = Device Code xx = 29 or 30 MJExx55TG G = PbFree Package A = Assembly Location AY WW Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping MJE2955TG TO220 50 Units / Rail (PbFree) MJE3055TG TO220 50 Units / Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 12 MJE2955T/DMJE2955T (PNP), MJE3055T (NPN) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2) V Vdc CEO(sus) (I = 200 mAdc, I = 0) 60 C B Collector Cutoff Current I Adc CEO (V = 30 Vdc, I = 0) 700 CE B Collector Cutoff Current I mAdc CEX (V = 70 Vdc, V = 1.5 Vdc) CE EB(off) 1.0 (V = 70 Vdc, V = 1.5 Vdc, T = 150C) CE EB(off) C 5.0 Collector Cutoff Current I mAdc CBO (V = 70 Vdc, I = 0) CB E 1.0 (V = 70 Vdc, I = 0, T = 150C) CB E C 10 Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 5.0 BE C ON CHARACTERISTICS DC Current Gain (Note 2) h FE (I = 4.0 Adc, V = 4 0 Vdc) C CE 20 100 (I = 10 Adc, V = 4.0 Vdc) C CE 5.0 CollectorEmitter Saturation Voltage (Note 2) V Vdc CE(sat) (I = 4.0 Adc, I = 0.4 Adc) C B 1.1 (I = 10 Adc, I = 3.3 Adc) C B 8.0 BaseEmitter On Voltage (Note 2) V Vdc BE(on) (I = 4.0 Adc, V = 4.0 Vdc) 1.8 C CE DYNAMIC CHARACTERISTICS CurrentGainBandwidth Product f MHz T (I = 500 mAdc, V = 10 Vdc, f = 500 kHz) 2.0 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 20%. www.onsemi.com 2