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X-On Electronics has gained recognition as a prominent supplier of MJE3439G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJE3439G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJE3439G ON Semiconductor

MJE3439G electronic component of ON Semiconductor
MJE3439G ON Semiconductor
MJE3439G Bipolar Transistors - BJT
MJE3439G  Semiconductors

Images are for reference only
See Product Specifications
Part No. MJE3439G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 350 V 300 mA 15MHz 15 W Through Hole TO-126
Datasheet: MJE3439G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
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MOQ : 1
Multiples : 1
1 : USD 0.2189
10 : USD 0.1921
100 : USD 0.1764
500 : USD 0.1754
1000 : USD 0.1718
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0
MOQ : 1
Multiples : 1
1 : USD 1.5182
10 : USD 1.298
100 : USD 0.9946
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MOQ : 500
Multiples : 500
500 : USD 0.2003
1500 : USD 0.2003
2500 : USD 0.1923
5000 : USD 0.1923
10000 : USD 0.1923
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Multiples : 2000
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MOQ : 1268
Multiples : 1268
1268 : USD 0.3212
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MOQ : 1000
Multiples : 1000
1000 : USD 0.3268
2500 : USD 0.274
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MOQ : 1
Multiples : 1
1 : USD 2.1115
10 : USD 0.7719
100 : USD 0.5676
500 : USD 0.4482
1000 : USD 0.3581
3000 : USD 0.3378
6000 : USD 0.3277
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Obsolete
0
MOQ : 36
Multiples : 1
36 : USD 0.2001
100 : USD 0.1764
500 : USD 0.1754
1000 : USD 0.1718
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0
MOQ : 36
Multiples : 1
36 : USD 0.2983
100 : USD 0.2413
500 : USD 0.237
1000 : USD 0.2323
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Obsolete
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MOQ : 36
Multiples : 1
36 : USD 0.2693
100 : USD 0.2234
500 : USD 0.2169
1000 : USD 0.2137
2500 : USD 0.2094
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Obsolete
0
MOQ : 36
Multiples : 1
36 : USD 0.2373
100 : USD 0.1898
500 : USD 0.1842
1000 : USD 0.1815
2500 : USD 0.1779
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Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJE3439G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJE3439G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJE3439G NPN Silicon High-Voltage Power Transistor This device is designed for use in lineoperated equipment requiring high f . T Features MJE3439G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 5.0 mAdc, I = 0) 350 C B Collector Cutoff Current I Adc CEO (V = 300 Vdc, I = 0) 20 CE B Collector Cutoff Current I Adc CEX (V = 450 Vdc, V = 1.5 Vdc) 500 CE EB(off) Collector Cutoff Current I Adc CBO (V = 350 Vdc, I = 0) 20 CB E Emitter Cutoff Current I Adc EBO (V = 5.0 Vdc, I = 0) 20 BE C ON CHARACTERISTICS DC Current Gain h FE (I = 2.0 mAdc, V = 10 Vdc) C CE 30 (I = 20 mAdc, V = 10 Vdc) C CE 15 200 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 50 mAdc, I = 4.0 mAdc) 0.5 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 50 mAdc, I = 4.0 mAdc) 1.3 C B BaseEmitter On Voltage V Vdc BE(on) (I = 50 mAdc, V = 10 Vdc) 0.8 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 10 Vdc, f = 5.0 MHz) 15 C CE Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 1.0 MHz) 10 CB E SmallSignal Current Gain h fe (I = 5.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 25 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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