MJE3439G NPN Silicon High-Voltage Power Transistor This device is designed for use in lineoperated equipment requiring high f . T Features MJE3439G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 5.0 mAdc, I = 0) 350 C B Collector Cutoff Current I Adc CEO (V = 300 Vdc, I = 0) 20 CE B Collector Cutoff Current I Adc CEX (V = 450 Vdc, V = 1.5 Vdc) 500 CE EB(off) Collector Cutoff Current I Adc CBO (V = 350 Vdc, I = 0) 20 CB E Emitter Cutoff Current I Adc EBO (V = 5.0 Vdc, I = 0) 20 BE C ON CHARACTERISTICS DC Current Gain h FE (I = 2.0 mAdc, V = 10 Vdc) C CE 30 (I = 20 mAdc, V = 10 Vdc) C CE 15 200 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 50 mAdc, I = 4.0 mAdc) 0.5 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 50 mAdc, I = 4.0 mAdc) 1.3 C B BaseEmitter On Voltage V Vdc BE(on) (I = 50 mAdc, V = 10 Vdc) 0.8 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 10 Vdc, f = 5.0 MHz) 15 C CE Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 1.0 MHz) 10 CB E SmallSignal Current Gain h fe (I = 5.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 25 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.