MJE344G Plastic NPN Silicon Medium-Power Transistor This device is useful for medium voltage applications requiring high f such as converters and extended range amplifiers. T Features MJE344G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I = 1.0 mAdc, I = 0) V 200 Vdc C B CEO(sus) Collector Cutoff Current (V = 200 Vdc, I = 0) I 1.0 mAdc CE B CEO Collector Cutoff Current (V = 200 Vdc, I = 0) I 0.1 mAdc CB E CBO Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 0.1 mAdc EB C EBO ON CHARACTERISTICS DC Current Gain (I = 50 mAdc, V = 10 Vdc) h 30 300 C CE FE CollectorEmitter Saturation Voltage (I = 50 mAdc, I = 5.0 mAdc) V 1.0 Vdc C B CE(sat) BaseEmitter On Voltage (I = 50 mAdc, V = 10 Vdc) V 1.0 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (I = 50 mAdc, V = 25 Vdc, f = 10 MHz) f 15 MHz C CE T Output Capacitance (V = 20 Vdc, I = 0, f = 100 kHz) C 15 pF CB E ob SmallSignal Current Gain (I = 50 mAdc, V = 10 Vdc, f = 1.0 kHz) h 25 C CE fe Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1.0 There are two limitations on the power handling ability of 500 s a transistor: average junction temperature and second 0.5 breakdown. Safe operating area curves indicate I V C CE ALL 1.0 ms limits of the transistor that must be observed for reliable 0.2 T = 150C operation i.e., the transistor must not be subjected to greater J ALL dissipation then the curves indicate. 0.1 dc The data of Figure 1 is based on T = 150 C T is J(pk) C variable depending on conditions. Second breakdown pulse 0.05 limits are valid for duty cycles to 10% provided T J(pk) SECOND BREAKDOWN LIMIT 150 C. At high case temperatures, thermal limitations BONDING WIRE LIMIT 0.02 will reduce the power that can be handled to values less then THERMAL LIMIT T = 25C C the limitations imposed by second breakdown. 0.01 10 20 30 40 60 100 200 300 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 1. Active Region Safe Operating Area 300 1.0 V = 2.0 V CE 200 V = 10 V CE 0.8 T = +150C J V I /I = 10 BE(sat) C B 100 +100C V V = 10 V 0.6 BE CE 70 + 25C 50 0.4 30 - 55C V I /I = 10 CE(sat) C B 20 0.2 T = + 25C J I /I = 5.0 C B 10 0 1.0 2.0 3.0 5.0 7.0 10 20 50 70 100 200 300 500 10 20 30 50 100 200 300 500 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 2. DC Current Gain Figure 3. On Voltages