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X-On Electronics has gained recognition as a prominent supplier of MJE344G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJE344G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJE344G ON Semiconductor

MJE344G electronic component of ON Semiconductor
MJE344G ON Semiconductor
MJE344G Bipolar Transistors - BJT
MJE344G  Semiconductors

Images are for reference only
See Product Specifications
Part No. MJE344G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 0.5A 200V 20W NPN
Datasheet: MJE344G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.3121
10 : USD 0.2719
100 : USD 0.2647
500 : USD 0.2608
1000 : USD 0.2556
2500 : USD 0.2556
5000 : USD 0.2556
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.915
N/A

Obsolete
0
MOQ : 53
Multiples : 53
53 : USD 0.4909
100 : USD 0.4713
300 : USD 0.4713
1000 : USD 0.4713
3000 : USD 0.4713
N/A

Obsolete
0

Multiples : 2000
N/A

Obsolete
0
MOQ : 175
Multiples : 1
175 : USD 0.3754
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.5894
10 : USD 0.7666
100 : USD 0.4322
500 : USD 0.3509
1000 : USD 0.2888
2500 : USD 0.2758
5000 : USD 0.2668
N/A

Obsolete
0
MOQ : 34
Multiples : 1
34 : USD 0.2374
100 : USD 0.2105
500 : USD 0.1922
1000 : USD 0.1902
2500 : USD 0.1864
N/A

Obsolete
0
MOQ : 35
Multiples : 1
35 : USD 0.2832
100 : USD 0.2647
500 : USD 0.2608
1000 : USD 0.2556
N/A

Obsolete
0
MOQ : 34
Multiples : 1
34 : USD 0.2374
100 : USD 0.2105
500 : USD 0.1922
1000 : USD 0.1902
2500 : USD 0.1864
N/A

Obsolete
0
MOQ : 34
Multiples : 1
34 : USD 0.2569
100 : USD 0.199
500 : USD 0.195
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJE344G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJE344G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJE344G Plastic NPN Silicon Medium-Power Transistor This device is useful for medium voltage applications requiring high f such as converters and extended range amplifiers. T Features MJE344G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I = 1.0 mAdc, I = 0) V 200 Vdc C B CEO(sus) Collector Cutoff Current (V = 200 Vdc, I = 0) I 1.0 mAdc CE B CEO Collector Cutoff Current (V = 200 Vdc, I = 0) I 0.1 mAdc CB E CBO Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 0.1 mAdc EB C EBO ON CHARACTERISTICS DC Current Gain (I = 50 mAdc, V = 10 Vdc) h 30 300 C CE FE CollectorEmitter Saturation Voltage (I = 50 mAdc, I = 5.0 mAdc) V 1.0 Vdc C B CE(sat) BaseEmitter On Voltage (I = 50 mAdc, V = 10 Vdc) V 1.0 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (I = 50 mAdc, V = 25 Vdc, f = 10 MHz) f 15 MHz C CE T Output Capacitance (V = 20 Vdc, I = 0, f = 100 kHz) C 15 pF CB E ob SmallSignal Current Gain (I = 50 mAdc, V = 10 Vdc, f = 1.0 kHz) h 25 C CE fe Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1.0 There are two limitations on the power handling ability of 500 s a transistor: average junction temperature and second 0.5 breakdown. Safe operating area curves indicate I V C CE ALL 1.0 ms limits of the transistor that must be observed for reliable 0.2 T = 150C operation i.e., the transistor must not be subjected to greater J ALL dissipation then the curves indicate. 0.1 dc The data of Figure 1 is based on T = 150 C T is J(pk) C variable depending on conditions. Second breakdown pulse 0.05 limits are valid for duty cycles to 10% provided T J(pk) SECOND BREAKDOWN LIMIT 150 C. At high case temperatures, thermal limitations BONDING WIRE LIMIT 0.02 will reduce the power that can be handled to values less then THERMAL LIMIT T = 25C C the limitations imposed by second breakdown. 0.01 10 20 30 40 60 100 200 300 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 1. Active Region Safe Operating Area 300 1.0 V = 2.0 V CE 200 V = 10 V CE 0.8 T = +150C J V I /I = 10 BE(sat) C B 100 +100C V V = 10 V 0.6 BE CE 70 + 25C 50 0.4 30 - 55C V I /I = 10 CE(sat) C B 20 0.2 T = + 25C J I /I = 5.0 C B 10 0 1.0 2.0 3.0 5.0 7.0 10 20 50 70 100 200 300 500 10 20 30 50 100 200 300 500 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 2. DC Current Gain Figure 3. On Voltages

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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