X-On Electronics has gained recognition as a prominent supplier of MJE350 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJE350 Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJE350 ON Semiconductor

MJE350 electronic component of ON Semiconductor
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See Product Specifications
Part No.MJE350
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans GP BJT PNP 300V 0.5A 3-Pin TO-225 Bulk
Datasheet: MJE350 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
35: USD 0.3481 ea
Line Total: USD 12.18 
Availability - 0
MOQ: 35  Multiples: 500
Pack Size: 500
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 35
Multiples : 500
35 : USD 0.3481
500 : USD 0.3165
1000 : USD 0.3044
2500 : USD 0.2998
5000 : USD 0.2863
7500 : USD 0.2821
25000 : USD 0.2766
50000 : USD 0.2725

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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We are delighted to provide the MJE350 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJE350 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in lineoperated applications such as low power, lineoperated series pass and switching regulators requiring PNP capability. MJE350G 200 1.0 T = 150C J T = 25C J 0.8 25C 100 V I /I = 10 BE(sat) C B 70 0.6 V V = 10 V BE CE - 55C 50 0.4 I /I = 10 C B 30 20 V = 2.0 V CE 0.2 V = 10 V CC V CE(sat) I /I = 5.0 C B 10 0 5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 1. DC Current Gain Figure 2. On Voltages 1000 + 1.2 700 + 100C to + 150C + 0.8 *APPLIES FOR I /I < h 100 s C B FE/4 500 + 25C to + 100C + 0.4 300 dc 0 200 * for V VC CE(sat) - 0.4 - 55C to + 25C 1.0 ms - 0.8 100 500 s + 25C to + 150C 70 - 1.2 T = 150C 50 J - 1.6 30 for V VB BE BONDING WIRE LIMITED - 2.0 20 THERMALLY LIMITED T = 25C C - 55C to + 25C - 2.4 SECOND BREAKDOWN LIMITED 10 - 2.8 20 30 50 70 100 200 300 400 5.0 7.0 10 20 30 50 70 100 200 300 500 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) I , COLLECTOR CURRENT (mA) CE C Figure 3. ActiveRegion Safe Operating Area Figure 4. Temperature Coefficients 20 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I V C CE 16 limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater 12 dissipation than the curves indicate. The data of Figure 3 is based on T = 150 C T is J(pk) C variable depending on conditions. Second breakdown pulse 8.0 limits are valid for duty cycles to 10% provided T J(pk) 150 C. At high case temperatures, thermal limitations 4.0 will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0 0 20 40 60 80 100 120 140 160 T , CASE TEMPERATURE (C) C Figure 5. Power Derating

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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