MJE350 ON Semiconductor

MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in lineoperated applications such as low power, lineoperated series pass and switching regulators requiring PNP capability. MJE350G 200 1.0 T = 150C J T = 25C J 0.8 25C 100 V I /I = 10 BE(sat) C B 70 0.6 V V = 10 V BE CE - 55C 50 0.4 I /I = 10 C B 30 20 V = 2.0 V CE 0.2 V = 10 V CC V CE(sat) I /I = 5.0 C B 10 0 5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 1. DC Current Gain Figure 2. On Voltages 1000 + 1.2 700 + 100C to + 150C + 0.8 *APPLIES FOR I /I < h 100 s C B FE/4 500 + 25C to + 100C + 0.4 300 dc 0 200 * for V VC CE(sat) - 0.4 - 55C to + 25C 1.0 ms - 0.8 100 500 s + 25C to + 150C 70 - 1.2 T = 150C 50 J - 1.6 30 for V VB BE BONDING WIRE LIMITED - 2.0 20 THERMALLY LIMITED T = 25C C - 55C to + 25C - 2.4 SECOND BREAKDOWN LIMITED 10 - 2.8 20 30 50 70 100 200 300 400 5.0 7.0 10 20 30 50 70 100 200 300 500 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) I , COLLECTOR CURRENT (mA) CE C Figure 3. ActiveRegion Safe Operating Area Figure 4. Temperature Coefficients 20 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I V C CE 16 limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater 12 dissipation than the curves indicate. The data of Figure 3 is based on T = 150 C T is J(pk) C variable depending on conditions. Second breakdown pulse 8.0 limits are valid for duty cycles to 10% provided T J(pk) 150 C. At high case temperatures, thermal limitations 4.0 will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0 0 20 40 60 80 100 120 140 160 T , CASE TEMPERATURE (C) C Figure 5. Power Derating