MJE5730, MJE5731, MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. www.onsemi.com Features 1.0 AMPERE Popular TO220 Plastic Package POWER TRANSISTORS PNP Complements to the TIP47 thru TIP50 Series PCP SILICON These Devices are PbFree and are RoHS Compliant* 300350400 VOLTS 50 WATTS MAXIMUM RATINGS COLLECTOR Rating Symbol Value Unit 2, 4 CollectorEmitter Voltage V Vdc CEO MJE5730 300 MJE5731 350 1 MJE5731A 375 BASE CollectorBase Voltage V Vdc CB MJE5730 300 3 MJE5731 350 EMITTER MJE5731A 375 EmitterBase Voltage V 5.0 Vdc EB 4 Collector Current Continuous I 1.0 Adc C Collector Current Peak I 3.0 Adc CM Base Current I 1.0 Adc B TO220 Total Device Dissipation P D CASE 221A09 T = 25 C 40 W C STYLE 1 Derate above 25C 0.32 W/ C Total Device Dissipation P D T = 25 C 2.0 W 1 C 2 Derate above 25C 0.016 W/ C 3 Unclamped Inducting Load Energy E 20 mJ (See Figure 10) MARKING DIAGRAM Operating and Storage Junction T , T 65 to +150 C J stg Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MJE573xG THERMAL CHARACTERISTICS AY WW Characteristics Symbol Max Unit Thermal Resistance, JunctiontoCase R 3.125 C/W JC Thermal Resistance, JunctiontoAmbient R 62.5 C/W JA MJE573x= Device Code x = 0, 1, or 1A G = PbFree Package A = Assembly Location Y = Year WW = Work Week *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 8 MJE5730/DMJE5730, MJE5731, MJE5731A ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) V Vdc CEO(sus) (I = 30 mAdc, I = 0) C B MJE5730 300 MJE5731 350 MJE5731A 375 Collector Cutoff Current I mAdc CEO (V = 200 Vdc, I = 0) CE B MJE5730 1.0 (V = 250 Vdc, I = 0) CE B MJE5731 1.0 (V = 300 Vdc, I = 0) CE B MJE5731A 1.0 Collector Cutoff Current I mAdc CES (V = 300 Vdc, V = 0) CE BE MJE5730 1.0 (V = 350 Vdc, V = 0) CE BE MJE5731 1.0 (V = 400 Vdc, V = 0) CE BE MJE5731A 1.0 Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 1.0 BE C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 0.3 Adc, V = 10 Vdc) 30 150 C CE (I = 1.0 Adc, V = 10 Vdc) 10 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 1.0 Adc, I = 0.2 Adc) 1.0 C B BaseEmitter On Voltage V Vdc BE(on) (I = 1.0 Adc, V = 10 Vdc) 1.5 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 0.2 Adc, V = 10 Vdc, f = 2.0 MHz) 10 C CE SmallSignal Current Gain h fe (I = 0.2 Adc, V = 10 Vdc, f = 1.0 kHz) 25 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 1.4 200 V = 10 V CE 1.2 100 T = 150C J 25C 1 50 T = 25C J 30 - 55C 0.8 20 0.6 10 - 55C 0.4 150C 5.0 0.2 V I /I = 5.0 CE(sat)) C B 3.0 2.0 0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 I , COLLECTOR CURRENT (AMPS) I , COLLECTOR CURRENT (AMPS) C C Figure 1. DC Current Gain Figure 2. CollectorEmitter Saturation Voltage www.onsemi.com 2 h , DC CURRENT GAIN FE V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE