X-On Electronics has gained recognition as a prominent supplier of MJF47G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJF47G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJF47G ON Semiconductor

MJF47G electronic component of ON Semiconductor
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See Product Specifications
Part No.MJF47G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 250 V 1 A 10MHz 2 W Through Hole TO-220FP
Datasheet: MJF47G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 0.6601 ea
Line Total: USD 33.01 
Availability - 0
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 50
Multiples : 50
50 : USD 1.2335
100 : USD 1.2288
250 : USD 1.224
500 : USD 1.2191
1000 : USD 1.2142
2500 : USD 1.2092
3000 : USD 1.2041
5000 : USD 1.199
10000 : USD 1.1938

0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 3.5714
10 : USD 3.0813
100 : USD 2.4026
500 : USD 1.9847
1000 : USD 1.5669
2000 : USD 1.4624
5000 : USD 1.3893
10000 : USD 1.337

0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 50
Multiples : 50
50 : USD 0.6601
200 : USD 0.6112
750 : USD 0.5867
1250 : USD 0.5867
2500 : USD 0.5867

0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 1100
Multiples : 1100
1100 : USD 0.7773

0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 3.9871
10 : USD 1.4995
50 : USD 1.3463
100 : USD 1.1081
500 : USD 0.9196
850 : USD 0.7259
2550 : USD 0.7073

0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 850
Multiples : 850
850 : USD 0.9947

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJF47G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJF47G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MJF47G High Voltage Power Transistor Isolated Package Applications Designed for line operated audio output amplifiers, switching power MJF47G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V 250 Vdc CEO(sus) (I = 30 mAdc, I = 0) C B Collector Cutoff Current I 0.2 mAdc CEO (V = 150 Vdc, I = 0) CE B Collector Cutoff Current I 0.1 mAdc CES (V = 350 Vdc, V = 0) CE BE Emitter Cutoff Current I 1 mAdc EBO (V = 5 Vdc, I = 0) BE C ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 0.3 Adc, V = 10 Vdc) C CE 30 150 (I = 1 Adc, V = 10 Vdc) C CE 10 CollectorEmitter Saturation Voltage V 1 Vdc CE(sat) (I = 1 Adc, I = 0.2 Adc) C B BaseEmitter On Voltage V 1.5 Vdc BE(on) (I = 1 Adc, V = 10 Vdc) C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product f 10 MHz T (I = 0.2 Adc, V 10 Vdc, f = 2 MHz) C CE 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. TYPICAL CHARACTERISTICS 200 1.4 V = 10 V CE 100 1.2 T = 150C J 60 1 40 25C V I /I = 5 BE(sat) C B 0.8 20 V V = 4 V - 55C BE(on) CE 0.6 10 0.4 T = 25C J 6 4 0.2 V I /I = 5 V CE(sat) C B 2 0 0.02 0.04 0.06 0.1 0.2 0.4 0.6 1 2 0.02 0.04 0.06 0.1 0.2 0.4 0.6 1 2 I , COLLECTOR CURRENT (AMPS) I , COLLECTOR CURRENT (AMPS) C C Figure 1. DC Current Gain Figure 2. On Voltages

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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