MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. MJL21195 (PNP), MJL21196 (NPN) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS (Note 2) CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 100 mAdc, I = 0) 250 C B Collector Cutoff Current I Adc CEO (V = 200 Vdc, I = 0) 100 CE B OFF CHARACTERISTICS (Note 3) Emitter Cutoff Current I Adc EBO (V = 5 Vdc, I = 0) 100 CE C Collector Cutoff Current I Adc CEX (V = 250 Vdc, V = 1.5 Vdc) 100 CE BE(off) SECOND BREAKDOWN (Note 3) Second Breakdown Collector Current with Base Forward Biased I Adc S/b (V = 50 Vdc, t = 1 s (Nonrepetitive) 4.0 CE (V = 80 Vdc, t = 1 s (Nonrepetitive) 2.25 CE ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 8 Adc, V = 5 Vdc) 25 100 C CE (I = 16 Adc, I = 5 Adc) 8.0 C B BaseEmitter On Voltage V Vdc BE(on) (I = 8 Adc, V = 5 Vdc) 2.2 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 8 Adc, I = 0.8 Adc) 1.4 C B (I = 16 Adc, I = 3.2 Adc) 4 C B DYNAMIC CHARACTERISTICS (Note 3) Total Harmonic Distortion at the Output T % HD (V = 28.3 V, f = 1 kHz, P = 100 W ) RMS LOAD RMS h unmatched 0.8 FE (Matched pair h = 50 5 A/5 V) FE h matched 0.08 FE Current Gain Bandwidth Product f MHz T (I = 1 Adc, V = 10 Vdc, f = 1 MHz) 4 C CE test Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 1 MHz) 500 CB E test 2. Pulse Test: Pulse Width = 5.0 s, Duty Cycle 10%. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. PNP MJL21195 NPN MJL21196 6.5 7.5 7.0 6.0 V = 10 V CE 6.5 V = 10 V CE 5.5 6.0 5.5 5.0 V = 5 V 5.0 CE V = 5 V CE 4.5 4.5 4.0 4.0 3.5 3.5 3.0 T = 25C T = 25C J J 2.5 3.0 f = 1 MHz f = 1 MHz test test 2.0 2.5 1.5 2.0 1.0 0.1 1.0 10 0.1 1.0 10 I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) C C Figure 1. Typical Current Gain Figure 2. Typical Current Gain Bandwidth Product Bandwidth Product