X-On Electronics has gained recognition as a prominent supplier of MJW1302AG Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJW1302AG Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJW1302AG ON Semiconductor

Name: MJW1302AG
Brand: ON Semiconductor
SKU: MJW1302AG_ON_Semiconductor
Availability: InStock
Rating: 5 (11 reviews)

MJW1302AG electronic component of ON Semiconductor

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See Product Specifications

Part No.	MJW1302AG
Manufacturer:	ON Semiconductor
Category:	Bipolar Transistors - BJT
Description:	Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 200 W Through Hole TO-247-3
Datasheet:	MJW1302AG Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

30: USD 3.125 ea
Line Total: USD 93.75

Availability - 1367
Ship by Fri. 07 Mar to Thu. 13 Mar

MOQ: 30 Multiples: 30
Pack Size: 30

MJW1302AG More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

1367

Ship by Fri. 07 Mar to Thu. 13 Mar

MOQ : 30
Multiples : 30

30 : USD 3.125
120 : USD 2.65
270 : USD 2.625
510 : USD 2.6125
1020 : USD 2.6
2520 : USD 2.5875
5010 : USD 2.575
7500 : USD 2.5625

Specifications

Manufacturer

ON Semiconductor ON Semiconductor

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

RoHS - XON

Y Y

Mounting Style

Through Hole Through Hole

Package / Case

TO - 247 - 3 TO - 247 - 3

Transistor Polarity

Pnp Pnp

Configuration

Single Single

Maximum DC Collector Current

15 A 15 A

Collector- Emitter Voltage VCEO Max

230 V 230 V

Collector- Base Voltage VCBO

230 V 230 V

Emitter- Base Voltage VEBO

5 V 5 V

Collector-Emitter Saturation Voltage

0.4 V 0.4 V

Gain Bandwidth Product fT

30 Mhz 30 Mhz

Minimum Operating Temperature

- 65 C - 65 C

Maximum Operating Temperature

+ 150 C + 150 C

Series

Mjw1302a Mjw1302a

Packaging

Tube Tube

Brand

On Semiconductor On Semiconductor

Continuous Collector Current

15 A 15 A

Dc Collector/Base Gain Hfe Min

50 50

Maximum Power Dissipation

200 W 200 W

Factory Pack Quantity :

30 30

Notes:- Show Stocked Products With Similar Attributes.

MJW1302AG Alternative Parts

We are delighted to provide the MJW1302AG from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJW1302AG and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors MJW3281A (NPN) MJW1302A (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 100 mAdc, I = 0) 230 C B Collector Cutoff Current I Adc CBO (V = 230 Vdc, I = 0) 50 CB E Emitter Cutoff Current I Adc EBO (V = 5 Vdc, I = 0) 5 EB C SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased I Adc S/b (V = 50 Vdc, t = 1 s (nonrepetitive) 4 CE (V = 100 Vdc, t = 1 s (nonrepetitive) 1 CE ON CHARACTERISTICS DC Current Gain h FE (I = 100 mAdc, V = 5 Vdc) 50 125 200 C CE (I = 1 Adc, V = 5 Vdc) 50 200 C CE (I = 3 Adc, V = 5 Vdc) 50 200 C CE (I = 5 Adc, V = 5 Vdc) 50 200 C CE (I = 7 Adc, V = 5 Vdc) 50 115 200 C CE (I = 8 Adc, V = 5 Vdc) 45 C CE (I = 15 Adc, V = 5 Vdc) 12 35 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 Adc, I = 1 Adc) 0.4 2 C B BaseEmitter On Voltage V Vdc BE(on) (I = 8 Adc, V = 5 Vdc) 2 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 1 Adc, V = 5 Vdc, f = 1 MHz) 30 C CE test Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 1 MHz) 600 CB E test

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
1367 Ship by Fri. 07 Mar to Thu. 13 Mar MOQ : 30 Multiples : 30	30 : USD 3.125 120 : USD 2.65 270 : USD 2.625 510 : USD 2.6125 1020 : USD 2.6 2520 : USD 2.5875 5010 : USD 2.575 7500 : USD 2.5625

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