MMBT2484LT1G Low Noise Transistor NPN Silicon Features www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS 1 BASE Rating Symbol Value Unit Collector Emitter Voltage V 60 Vdc CEO 2 Collector Base Voltage V 60 Vdc CBO EMITTER Emitter Base Voltage V 6.0 Vdc EBO Collector Current Continuous I 100 mAdc C 3 THERMAL CHARACTERISTICS 1 Characteristic Symbol Max Unit 2 Total Device Dissipation FR5 Board, P D SOT23 (TO236) (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C CASE 318 STYLE 6 Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Device Dissipation Alumina P D MARKING DIAGRAM Substrate, (Note 2) T = 25C 300 mW A Derate above 25C 2.4 mW/C Thermal Resistance, JunctiontoAmbient R 417 C/W JA 1U M Junction and Storage Temperature T , T 55 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the 1 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1U = Device Code 1. FR5 = 1.0 x 0.75 x 0.062 in. M = Date Code* 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT2484LT1G SOT23 3,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 5 MMBT2484LT1/DMMBT2484LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 60 C B Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 60 C E Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C Collector Cutoff Current I CBO (V = 45 Vdc, I = 0) 10 nAdc CB E (V = 45 Vdc, I = 0, T = 150C) 10 Adc CB E A Emitter Cutoff Current I nAdc EBO (V = 5.0 Vdc, I = 0) 10 EB C ON CHARACTERISTICS DC Current Gain h FE (I = 1.0 mAdc, V = 5.0 Vdc) 250 C CE (I = 10 mAdc, V = 5.0 Vdc) 800 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 1.0 mAdc, I = 0.1 mAdc) 0.35 C B Base Emitter On Voltage V Vdc BE(on) (I = 1.0 mAdc, V = 5.0 Vdc) 0.95 C CE SMALLSIGNAL CHARACTERISTICS Output Capacitance C pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) 6.0 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 6.0 EB C Noise Figure NF dB (I = 10 Adc, V = 5.0 Vdc, R = 10 k , f = 1.0 kHz, BW = 200 Hz) 3.0 C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. R S i n e n IDEAL TRANSISTOR Figure 1. Transistor Noise Model www.onsemi.com 2